AlInGaAs/AlGaAs strained material and strained quantum well lasers grown by MBE

ZunTu Xu; Guowen Yang; Jun-Ying Xu; Jing-Ming Zhang; Changhua Chen; Lianhui Chen; Guangdi Shen

doi:10.1117/12.251913

24 September 1996 AlInGaAs/AlGaAs strained material and strained quantum well lasers grown by MBE

ZunTu Xu, Guowen Yang, Jun-Ying Xu, Jing-Ming Zhang, Changhua Chen, Lianhui Chen, Guangdi Shen

Proceedings Volume 2886, Semiconductor Lasers II; (1996) https://doi.org/10.1117/12.251913
Event: Photonics China '96, 1996, Beijing, China

Abstract

Recently there ar some reports on the AlInGaAs/AlGaAs material system with emission wavelength in the range of 800-890nm. The AlInGaAs/AlGaAs strained quantum well lasers are usually grown by metal-organic chemical vapor deposition and there are few of them that have been grown by solid- source molecular beam epitaxy (MBE). In this paper we report the characteristics of AlInGaAs/AlGaAs strained quantum well materials and lasers grown by MBE. A typical 10K photoluminescence spectrum with FWHM value of 10 meV is comparable with that of GaAs/AlGaAs quantum well materials. InAlGaAs/AlGaAs strained quantum well lasers with a emission wavelength of 810nm were fabricated, the threshold current density is 375 A/cm² for broad-area lasers, and it decreases to 290 A/cm² when the cavity length extend to 1600 micrometers an external differential quantum efficiency of 0.92 W/A and narrow perpendicular beam divergence of 32 degrees are demonstrated for the uncoated lasers with cavity length of 800 micrometers .

Citation Download Citation

ZunTu Xu, Guowen Yang, Jun-Ying Xu, Jing-Ming Zhang, Changhua Chen, Lianhui Chen, and Guangdi Shen "AlInGaAs/AlGaAs strained material and strained quantum well lasers grown by MBE", Proc. SPIE 2886, Semiconductor Lasers II, (24 September 1996); https://doi.org/10.1117/12.251913

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