1.8-inch poly-Si TFT-LCDs with novel TFT structure and storage capacitance arrangement

Takashi Sugawara; Kazuhiro Kobayashi; Hiroyuki Murai; Christiaan Baert; Takao Sakamoto; Hidetada Tokioka; Yuichi Masutani; Hirofumi Namizaki; Masahiro Nunoshita

doi:10.1117/12.151214

13 August 1993 1.8-inch poly-Si TFT-LCDs with novel TFT structure and storage capacitance arrangement

Takashi Sugawara, Kazuhiro Kobayashi, Hiroyuki Murai, Christiaan Baert, Takao Sakamoto, Hidetada Tokioka, Yuichi Masutani, Hirofumi Namizaki, Masahiro Nunoshita

Author Affiliations +

Proceedings Volume 1911, Liquid Crystal Materials, Devices, and Applications II; (1993) https://doi.org/10.1117/12.151214
Event: IS&T/SPIE's Symposium on Electronic Imaging: Science and Technology, 1993, San Jose, CA, United States

Abstract

We have fabricated 1.8-inch and 86,400-pixel poly-Si TFT-LCDs with a novel TFT structure and a storage capacitance (Cst) arrangement. The TFTs have a self-aligned offset structure which is made by a simple process without using an additional mask. With this structure, we have reduced the OFF current, and hence, attained a high ON/OFF current ratio of 10⁷. A novel Cst line arrangement called 'modified Cst on gate' was adopted. Gate lines and Cst lines are arranged alternatively, and the (n-1)-th Cst line is connected to the n-th gate line at the line's end. The Cst line works as redundancy of the gate line. Consequently, we have obtained TFT arrays with no line-defects (240 gate lines). By using these techniques, we have succeeded in fabricating a high-performance 1.8-inch poly-Si TFT-LCD panel for a projection TV.

Citation Download Citation

Takashi Sugawara, Kazuhiro Kobayashi, Hiroyuki Murai, Christiaan Baert, Takao Sakamoto, Hidetada Tokioka, Yuichi Masutani, Hirofumi Namizaki, and Masahiro Nunoshita "1.8-inch poly-Si TFT-LCDs with novel TFT structure and storage capacitance arrangement", Proc. SPIE 1911, Liquid Crystal Materials, Devices, and Applications II, (13 August 1993); https://doi.org/10.1117/12.151214

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