Suppression of resist heating effect by multiple electron-beam exposure on GaAs substrates

Hiroyuki Minami; Hirofumi Nakano; Kazuhiko Sato; Hirozo Takano

doi:10.1117/12.146506

24 June 1993 Suppression of resist heating effect by multiple electron-beam exposure on GaAs substrates

Hiroyuki Minami, Hirofumi Nakano, Kazuhiko Sato, Hirozo Takano

Proceedings Volume 1924, Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing III; (1993) https://doi.org/10.1117/12.146506
Event: SPIE'S 1993 Symposium on Microlithography, 1993, San Jose, CA, United States

Abstract

The multiple exposure technique in electron beam (EB) lithography has been studied from standpoints of resist sensitivity, contrast, dissolution rate, linewidth and edge roughness delineating 0.1 micrometers pattern on the resist. The increase of the dissolution rate, the improvement of the sensitivity and the change in the contrast have been observed in multiple exposure. These phenomena, which are different from the case of Variable-shaped EB lithography, are considered to be caused by the suppression of thermal crosslinking.

Citation Download Citation

Hiroyuki Minami, Hirofumi Nakano, Kazuhiko Sato, and Hirozo Takano "Suppression of resist heating effect by multiple electron-beam exposure on GaAs substrates", Proc. SPIE 1924, Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing III, (24 June 1993); https://doi.org/10.1117/12.146506

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