Further evaluation of GaAs FETs for cryogenic readout

Randall K. Kirschman; John A. Lipa

doi:10.1117/12.158687

20 October 1993 Further evaluation of GaAs FETs for cryogenic readout

Randall K. Kirschman, John A. Lipa

Proceedings Volume 1946, Infrared Detectors and Instrumentation; (1993) https://doi.org/10.1117/12.158687
Event: Optical Engineering and Photonics in Aerospace Sensing, 1993, Orlando, FL, United States

Abstract

Low-frequency, low-noise, low-power cryogenic electronics to read out photodetectors is being investigated for the star-tracking telescope of the Gravity Probe B spacecraft. We report additional results in evaluating low-frequency '1/f' noise of commercial and non-commercial GaAs field-effect transistors (FETs) at room and liquid-helium temperatures. No correlation was found between noise at these two temperatures. For our dc biasing conditions, the lowest- noise non-commercial GaAs FETs give a typical value of K_f (equals A_f x gate area) approximately equals 2 X 10^-22 V² (DOT) m²; this corresponds to a noise voltage of approximately equals 80 nV/Hz^1/2 at 1 Hz for a gate area of 3 X 10⁴ micrometers ², only a factor of approximately equals 3 higher than the best Si JFETs of comparable gate area operated at their optimum temperature. RTSs (random telegraph signals) were observed for many GaAs MESFETs at 4 K, for gate areas up to approximately equals 5000 micrometers ². We also examined low-frequency '1/f' noise in relation to FET materials, processing, and pinch- off voltage but the results were inconclusive.

Citation Download Citation

Randall K. Kirschman and John A. Lipa "Further evaluation of GaAs FETs for cryogenic readout", Proc. SPIE 1946, Infrared Detectors and Instrumentation, (20 October 1993); https://doi.org/10.1117/12.158687

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