Paper
31 January 1994 Porous silicon - a new material studied by IR spectroscopy
Wolfgang Theiss, M. Arntzen, Stefan Facsko, M. Feuerbacher, M. Wernke, Peter Grosse, H. Muender, M. Thoenissen
Author Affiliations +
Proceedings Volume 2089, 9th International Conference on Fourier Transform Spectroscopy; (1994) https://doi.org/10.1117/12.166757
Event: Fourier Transform Spectroscopy: Ninth International Conference, 1993, Calgary, Canada
Abstract
We show how IR spectroscopy can be employed successfully in the analysis of porous silicon, e.g., to monitor important parameters as the hydrogen and oxygen concentration or the layer thickness nondestructively.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Wolfgang Theiss, M. Arntzen, Stefan Facsko, M. Feuerbacher, M. Wernke, Peter Grosse, H. Muender, and M. Thoenissen "Porous silicon - a new material studied by IR spectroscopy", Proc. SPIE 2089, 9th International Conference on Fourier Transform Spectroscopy, (31 January 1994); https://doi.org/10.1117/12.166757
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KEYWORDS
Silicon

Photoresist materials

Infrared spectroscopy

Etching

Hydrogen

Microscopy

Oxygen

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