Process modification to reduce damage to reactive ion etched surfaces

Durga Misra; O. W. Purbo; C. R. Selvakumar

doi:10.1117/12.167346

15 February 1994 Process modification to reduce damage to reactive ion etched surfaces

Durga Misra, O. W. Purbo, C. R. Selvakumar

Proceedings Volume 2091, Microelectronic Processes, Sensors, and Controls; (1994) https://doi.org/10.1117/12.167346
Event: Microelectronic Processing '93, 1993, Monterey, CA, United States

Abstract

An experimental investigation was carried out to verify the effect of process modification to surface charging effects in reactive ion etching. It was observed that addition of certain percentage of N₂ reduces the surface damage during reactive ion etching of silicon in a SF₆ + O₂ plasma even though the N₂ additive improved the etch rate and selectivity by 44 - 64%.

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Durga Misra, O. W. Purbo, and C. R. Selvakumar "Process modification to reduce damage to reactive ion etched surfaces", Proc. SPIE 2091, Microelectronic Processes, Sensors, and Controls, (15 February 1994); https://doi.org/10.1117/12.167346

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