Measurement of discharge impedance for dry etch process control

Frank A. Bose; Roger Patrick; Henry Baltes

doi:10.1117/12.186777

16 September 1994 Measurement of discharge impedance for dry etch process control

Frank A. Bose, Roger Patrick, Henry Baltes

Proceedings Volume 2336, Manufacturing Process Control for Microelectronic Devices and Circuits; (1994) https://doi.org/10.1117/12.186777
Event: Microelectronic Manufacturing, 1994, Austin, TX, United States

Abstract

Various applications of an rf sensor to improve manufacturability and its use for equipment maintenance are discussed. It has been found that feedback control of the load power improved wafer to wafer repeatability for both etch rate and uniformity. The sensitivity of the rf measurements to changes in the physical or chemical properties of the discharge, their nonintrusive nature and real time monitoring capabilities suggest their use as a sophisticated process monitor. Process shifts, chamber coating and even misloaded wafers can all be detected. The use of the sensor for feedback control improved process latitude and repeatability. This allows for both tighter process specification and improved manufacturability.

Citation Download Citation

Frank A. Bose, Roger Patrick, and Henry Baltes "Measurement of discharge impedance for dry etch process control", Proc. SPIE 2336, Manufacturing Process Control for Microelectronic Devices and Circuits, (16 September 1994); https://doi.org/10.1117/12.186777

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