Transfer mask for high-aspect-ratio microlithography

Yuli Vladimirsky; Olga Vladimirsky; Volker Saile; Kevin J. Morris; J. Michael Klopf

doi:10.1117/12.209186

19 May 1995 Transfer mask for high-aspect-ratio microlithography

Yuli Vladimirsky, Olga Vladimirsky, Volker Saile, Kevin J. Morris, J. Michael Klopf

Proceedings Volume 2437, Electron-Beam, X-Ray, EUV, and Ion-Beam Submicrometer Lithographies for Manufacturing V; (1995) https://doi.org/10.1117/12.209186
Event: SPIE's 1995 Symposium on Microlithography, 1995, Santa Clara, CA, United States

Abstract

For conventional patterning (optical or x-ray microlithography and micromachining) a mask with a substrate reasonably transparent to desired radiation is used. A new technique - transfer mask or sacrificial patterning - is described in this paper. The technique is based on forming absorber pattern directly on the surface of the sample. This method is suitable for any radiation (visible light, UV, X-rays, electron and ion beams) and allows use of a conventional master masks (optical or x-ray) with low, medium, high (submicron) resolution to achieve patterns with desired aspect ratio. Multiple exposures and sequential developments can produce patterns with extremely high aspect ratio. New lithography techniques, such as in-situ development, UV and x-ray radiation assisted chemistry (etching and deposition), can be easily realized by using this transfer mask technique. Forming the transfer mask directly on the sample opens new possibilities not available with the conventional masks: exposure of samples with curved surfaces and dynamic deformation of the sample surfaces during the exposure, etc.

Citation Download Citation

Yuli Vladimirsky, Olga Vladimirsky, Volker Saile, Kevin J. Morris, and J. Michael Klopf "Transfer mask for high-aspect-ratio microlithography", Proc. SPIE 2437, Electron-Beam, X-Ray, EUV, and Ion-Beam Submicrometer Lithographies for Manufacturing V, (19 May 1995); https://doi.org/10.1117/12.209186

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