Simultaneous determination of thickness and optical constants of thin films

A. Rahim Forouhi; Iris Bloomer

doi:10.1117/12.209240

22 May 1995 Simultaneous determination of thickness and optical constants of thin films

A. Rahim Forouhi, Iris Bloomer

Proceedings Volume 2439, Integrated Circuit Metrology, Inspection, and Process Control IX; (1995) https://doi.org/10.1117/12.209240
Event: SPIE's 1995 Symposium on Microlithography, 1995, Santa Clara, CA, United States

Abstract

A new technique that furnishes simultaneous and unambiguous determination of thickness and n(A) and k(A) spectra as well as energy bandgap, Eg , of a wide variety of semiconductor and dielectric thin films deposited on either opaque or transparent substrates will be described. The n(A) and k(A) spectra are determined over a wide range of wavelengths from deep-ultraviolet to near-infrared (190 nm ) 900 nm). Films as thin as 20 A can be measured. The technique is based on reflection/absorption spectroscopy and optical dispersion equations derived by A.R. Forouhi and I. Bloomer. Applications include, but are not limited to: a-C:H on magnetic disks and on A1TiC (with or without a thin SiNX adhesion layer), SiN:H and SiO:H deposited on Si, a-Si:H deposited on oxidized Si, ITO deposited on glass or quartz, SiO on glass, and TiO on quartz. Furthermore, the technique can be used to characterize the damaged silicon surface layer produced by plasma cleaning of bare crystalline silicon wafers.

Citation Download Citation

A. Rahim Forouhi and Iris Bloomer "Simultaneous determination of thickness and optical constants of thin films", Proc. SPIE 2439, Integrated Circuit Metrology, Inspection, and Process Control IX, (22 May 1995); https://doi.org/10.1117/12.209240

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