Application of pattern recognition in mix-and-match lithography

Warren W. Flack; Gary E. Flores; Thinh Tran

doi:10.1117/12.209317

26 May 1995 Application of pattern recognition in mix-and-match lithography

Warren W. Flack, Gary E. Flores, Thinh Tran

Author Affiliations +

Proceedings Volume 2440, Optical/Laser Microlithography VIII; (1995) https://doi.org/10.1117/12.209317
Event: SPIE's 1995 Symposium on Microlithography, 1995, Santa Clara, CA, United States

Abstract

Mix-and-match lithography continues to gain acceptance as a valuable strategy for reducing capital costs and increasing throughput productivity in semiconductor manufacturing. The successful implementation of mix-and-match lithography requires consideration of the unique characteristics of all systems being matched. Among these issues are alignment target placement and alignment strategy. The alignment system for each stepper manufacturer uses specially designed targets for wafer alignment. However, the wafer area available for dedicated alignment targets is typically restricted to maximize the quantity of production die per wafer. One approach to remove the target area limitation is to implement an alignment system based on pattern recognition techniques.

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Warren W. Flack, Gary E. Flores, and Thinh Tran "Application of pattern recognition in mix-and-match lithography", Proc. SPIE 2440, Optical/Laser Microlithography VIII, (26 May 1995); https://doi.org/10.1117/12.209317

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