Integrated strained-layer photonic devices by selective area epitaxy

James J. Coleman

doi:10.1117/12.230072

15 January 1996 Integrated strained-layer photonic devices by selective area epitaxy

James J. Coleman

Proceedings Volume 2610, Laser Diode Chip and Packaging Technology; (1996) https://doi.org/10.1117/12.230072
Event: Photonics East '95, 1995, Philadelphia, PA, United States

Abstract

Selective-area epitaxy over a patterned dual stripe oxide mask allows the fabrication of strained-layer buried heterostructure quantum well lasers in which the quantum well thickness and, hence, emission wavelength is defined anywhere on the wafer by the stripe width and spacing. This in-plane bandgap energy control allows the designer to fabricate devices with different wavelengths on the same wafer for integrated opto-electronic applications. Since no growth occurs on the oxide mask, the spacing between stripes defines the width of the lateral optical waveguide, and the width of the stripes defines the amount of growth rate and composition enhancement in the quantum well. A very wide range of emission wavelengths (i.e. 960 - 1060 nm) can be obtained over the wafer surface in a single growth. A number of novel and high performance photonic devices have been fabricated in this manner including sub-milliampere threshold current lasers, lasers integrated with waveguides, modulators, and detectors, multiple-wavelength WDM arrays, broad-band LEDs, and redundant sources.

Citation Download Citation

James J. Coleman "Integrated strained-layer photonic devices by selective area epitaxy", Proc. SPIE 2610, Laser Diode Chip and Packaging Technology, (15 January 1996); https://doi.org/10.1117/12.230072

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