Low-doped etch stopping for micromechanical device production

David B. Murfett; Malcolm R. Haskard; Alan J. Marriage

doi:10.1117/12.221292

19 September 1995 Low-doped etch stopping for micromechanical device production

David B. Murfett, Malcolm R. Haskard, Alan J. Marriage

Proceedings Volume 2639, Micromachining and Microfabrication Process Technology; (1995) https://doi.org/10.1117/12.221292
Event: Micromachining and Microfabrication, 1995, Austin, TX, United States

Abstract

This paper describes significant advancements to a low doped etch-stop technique which increases the differential etch rate of high doped to low doped silicon (R_h/l) by a factor of 4 or greater, to a value of up to R_h/l approximately equals 50:1. The objective of the research was to achieve this increase in the differential etch rate by decreasing the etch rate of the low doped silicon epilayer, resulting in the development of an exceptional technique for rapid, safe, and high-quality etching of complex micro-structures. The technique has been confirmed by the production of devices. These include both 10 micrometers thick diaphragms and a complete accelerometer structure, created fom n on n+ epitaxial samples.

Citation Download Citation

David B. Murfett, Malcolm R. Haskard, and Alan J. Marriage "Low-doped etch stopping for micromechanical device production", Proc. SPIE 2639, Micromachining and Microfabrication Process Technology, (19 September 1995); https://doi.org/10.1117/12.221292

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