Photoresist metrology based on light scattering

Joerg Bischoff; Jorg W. Baumgart; Horst Truckenbrodt; Joachim J. Bauer

doi:10.1117/12.240118

21 May 1996 Photoresist metrology based on light scattering

Joerg Bischoff, Jorg W. Baumgart, Horst Truckenbrodt, Joachim J. Bauer

Proceedings Volume 2725, Metrology, Inspection, and Process Control for Microlithography X; (1996) https://doi.org/10.1117/12.240118
Event: SPIE's 1996 International Symposium on Microlithography, 1996, Santa Clara, CA, United States

Abstract

Angle resolved light scatterometry along with advanced data analysis is a promising new metrology technique to meet the challenges of today's and tomorrow's submicron technology. The measurement accuracy strongly depends on the performance capabilities of the algorithms utilized for data exploration and analysis. Presently, multivariate regression methods such as inverse least squares and principal component approaches are preferred. Substantial accuracy gains may be achieved by applying quasi-nonlinear methods, i.e. nonlinear data pretreatment followed by the usual linear regression. In this way, not only were the linewidth prediction errors in measuring developed resist lines pushed to below 20 nm, but likewise more complicated tasks such as silylation profile evaluation and latent image measurement could be addressed satisfactorily.

Citation Download Citation

Joerg Bischoff, Jorg W. Baumgart, Horst Truckenbrodt, and Joachim J. Bauer "Photoresist metrology based on light scattering", Proc. SPIE 2725, Metrology, Inspection, and Process Control for Microlithography X, (21 May 1996); https://doi.org/10.1117/12.240118

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