Effects of double Schottky barrier on the electric properties of ceramic semiconductors

Kazuo Mukae; Koichi Tsuda; Akinori Tanaka

doi:10.1117/12.237068

26 April 1996 Effects of double Schottky barrier on the electric properties of ceramic semiconductors

Kazuo Mukae, Koichi Tsuda, Akinori Tanaka

Proceedings Volume 2779, 3rd International Conference on Intelligent Materials and 3rd European Conference on Smart Structures and Materials; (1996) https://doi.org/10.1117/12.237068
Event: 3rd International Conference on Intelligent Materials, 1996, Lyon, France

Abstract

Effects of the interface states at the grain boundaries on the applied voltage dependence of the double Schottky barrier (DSB) are theoretically discussed. Based on the simplified models of rectangular density distributions for the interface states, effects of the energy level, density of states, and the distribution width of the interface states are quantitatively calculated. The I-V characteristics of DSB's are also calculated and the nonlinear I-V relations are discussed. The nonlinear exponent (alpha) of the I-V relation was found to be determined mainly by the barrier height and the total charge of the interface states. The observed ICTS spectra and other electric properties of ZnO varistors and PTC thermistors are discussed on the basis of the above DSB model.

Citation Download Citation

Kazuo Mukae, Koichi Tsuda, and Akinori Tanaka "Effects of double Schottky barrier on the electric properties of ceramic semiconductors", Proc. SPIE 2779, 3rd International Conference on Intelligent Materials and 3rd European Conference on Smart Structures and Materials, (26 April 1996); https://doi.org/10.1117/12.237068

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