Paper
3 October 1996 High contrast ratio asymmetric Fabry-Perot optical modulators based on GaAs/AlGaAs multiple quantum wells
Zhibiao Chen, Hongda Chen, Wen Gao, Rong Han Wu
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Abstract
A three-layer model and transmission matrix method are developed to analyze the modulation characteristics of GaAs/GaAlAs multiple quantum well asymmetric Fabry-Perot optical modulators. Two conditions of zero reflectivity for getting high contrast ratio are demonstrated and used to design normally-on and normally-off modulators. Low reflectivity of about 5% and high contrast ratio of about 10 are achieved.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Zhibiao Chen, Hongda Chen, Wen Gao, and Rong Han Wu "High contrast ratio asymmetric Fabry-Perot optical modulators based on GaAs/AlGaAs multiple quantum wells", Proc. SPIE 2897, Electro-Optic and Second Harmonic Generation Materials, Devices, and Applications, (3 October 1996); https://doi.org/10.1117/12.252941
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KEYWORDS
Reflectivity

Quantum wells

Chromium

Fabry–Perot interferometers

Optical modulators

Modulators

Absorption

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