Paper
2 May 1997 High-power laser diodes at various wavelengths
Mark A. Emanuel, Jay A. Skidmore, Raymond J. Beach
Author Affiliations +
Abstract
High power laser diodes at various wavelengths are described. First, performance and reliability of an optimized large transverse mode diode structure at 808 and 941 nm are presented. Next, data are presented on a 9.5 kW peak power array at 900 nm having a narrow emission bandwidth suitable for pumping Yb:S-FAP laser materials. Finally, results on a fiber-coupled laser diode array at approximately 730 nm are presented.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Mark A. Emanuel, Jay A. Skidmore, and Raymond J. Beach "High-power laser diodes at various wavelengths", Proc. SPIE 3001, In-Plane Semiconductor Lasers: from Ultraviolet to Midinfrared, (2 May 1997); https://doi.org/10.1117/12.273775
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CITATIONS
Cited by 3 scholarly publications.
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KEYWORDS
Diodes

High power lasers

Reliability

Semiconductor lasers

Quantum wells

Doping

Tissue optics

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