High-electric-field phenomena in polycrystalline silicon thin film transistors

Guglielmo Fortunato; R. Carluccio; L. Colalongo; S. Giovannini; L. Mariucci; F. Massussi; M. Valdinoci

doi:10.1117/12.270290

10 April 1997 High-electric-field phenomena in polycrystalline silicon thin film transistors

Guglielmo Fortunato, R. Carluccio, L. Colalongo, S. Giovannini, L. Mariucci, F. Massussi, M. Valdinoci

Proceedings Volume 3014, Active Matrix Liquid Crystal Displays Technology and Applications; (1997) https://doi.org/10.1117/12.270290
Event: Electronic Imaging '97, 1997, San Jose, CA, United States

Abstract

Polysilicon thin-film transistors are of great interest for their application in large area microelectronics and especially for their circuit applications. A successful circuit design requires a proper understanding of the electrical characteristics and in the present work some specific aspects related to the presence of high electric fields at the drain end of the channel are presented.

Citation Download Citation

Guglielmo Fortunato, R. Carluccio, L. Colalongo, S. Giovannini, L. Mariucci, F. Massussi, and M. Valdinoci "High-electric-field phenomena in polycrystalline silicon thin film transistors", Proc. SPIE 3014, Active Matrix Liquid Crystal Displays Technology and Applications, (10 April 1997); https://doi.org/10.1117/12.270290

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