7 October 2014Study of the improvements in the electrical performance of solution-processed metal oxide thin-film transistors using self-assembled monolayers
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Thin-film transistors (TFTs) of a metal oxide semiconductor typically are transparent and have high mobility to be paid
attention for back plane of displays. One of the most actively studied fabrication methods of metal oxide semiconductors
is the solution processing (sol-gel) method, owing to its low-cost, simple and fast steps that ensure good product uniformity, and applicability to roll-to-roll processing. Our study focused on probing the electronic properties of
solution-processed metal oxide TFTs. We have calculated the density of state (DOS) with monochromatic photonic
capacitance-voltage (MPCV) measurements. Improvements in device are proved by electronic and photo-electronic methods.
Jin-Woo Park,Hyungjoong Kim,Dae Hwan Kim, andMijung Lee
"Study of the improvements in the electrical performance of solution-processed metal oxide thin-film transistors using self-assembled monolayers", Proc. SPIE 9185, Organic Field-Effect Transistors XIII; and Organic Semiconductors in Sensors and Bioelectronics VII, 91850M (7 October 2014); https://doi.org/10.1117/12.2061706
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Jin-Woo Park, Hyungjoong Kim, Dae Hwan Kim, Mijung Lee, "Study of the improvements in the electrical performance of solution-processed metal oxide thin-film transistors using self-assembled monolayers," Proc. SPIE 9185, Organic Field-Effect Transistors XIII; and Organic Semiconductors in Sensors and Bioelectronics VII, 91850M (7 October 2014); https://doi.org/10.1117/12.2061706