Anodic bonding technique for silicon-to-ITO coated glass bonding

Woo-Beom Choi; Byeong-Kwon Ju; Yun-Hi Lee; Myung-Hwan Oh; Man-Young Sung

doi:10.1117/12.276624

19 June 1997 Anodic bonding technique for silicon-to-ITO coated glass bonding

Woo-Beom Choi, Byeong-Kwon Ju, Yun-Hi Lee, Myung-Hwan Oh, Man-Young Sung

Proceedings Volume 3046, Smart Structures and Materials 1997: Smart Electronics and MEMS; (1997) https://doi.org/10.1117/12.276624
Event: Smart Structures and Materials '97, 1997, San Diego, CA, United States

Abstract

We performed silicon-to-In₂O₃:Sn coated glass bonding using anodic bonding process. Corning #7740 glass layer was deposited on In₂O₃:Sn coated glass by electron beam evaporation. It was confirmed that the composition of the deposited glass layer was nearly same as that of the bulk Corning #7740 glass plate using Auger electron spectroscopy. In this work, silicon and In₂O₃:Sn coated glass with the deposited glass layer can be bonded at 190 degree(s)C with an applied voltage of 60V_DC. In order to study the role of sodium ion, firstly, the bonding kinetics are modeled as resulting from the transport of sodium ions through the surface of the deposited glass layer. Secondary, the results of secondary ion mass spectroscopy analysis were used to confirm the modeled bonding kinetics of silicon-to-In₂O₃:Sn coated glass. This process can be applied for the vacuum packaging of microelectronic devices such as field emission display.

Citation Download Citation

Woo-Beom Choi, Byeong-Kwon Ju, Yun-Hi Lee, Myung-Hwan Oh, and Man-Young Sung "Anodic bonding technique for silicon-to-ITO coated glass bonding", Proc. SPIE 3046, Smart Structures and Materials 1997: Smart Electronics and MEMS, (19 June 1997); https://doi.org/10.1117/12.276624

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