Paper
28 July 1997 Advanced mask metrology system for up to 4-Gb DRAM
Taro Ototake, Eiji Matsubara, Keiichi Hosoi
Author Affiliations +
Abstract
Photolithography using photomasks will be used for at least up to the 4 Gbit DRAM generation. For these advanced photomasks, higher performance will be demanded from the mask metrology system. The metrology system must satisfy performance criteria such as higher measurement accuracy, handling capability for larger reticles (9' by 9') and so forth, because the pattern rule for reticles will be tighter and the exposure field area will grow in the next generation. Nikon Corporation has been providing a mask metrology system, the XY-5i which can be used for up to the 1 Gbit DRAM generation. In order to meet the above mentioned required performance for the next generation system, Nikon has developed a new metrology system, the XY-6i. The XY-6i has higher measurement accuracy and resolution for pattern coordinates and critical dimensions on reticles and can also measure wafers and next generation reticles (9' by 9') automatically.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Taro Ototake, Eiji Matsubara, and Keiichi Hosoi "Advanced mask metrology system for up to 4-Gb DRAM", Proc. SPIE 3096, Photomask and X-Ray Mask Technology IV, (28 July 1997); https://doi.org/10.1117/12.277269
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CITATIONS
Cited by 3 patents.
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KEYWORDS
Photomasks

Metrology

Semiconducting wafers

Reticles

Mirrors

Edge detection

Critical dimension metrology

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