High-resolution PITS studies of deep-level defects in semi-insulating GaAs and InP

Pawel Kaminski; Michal Pawlowski; Roman Kozlowski; Robert Cwirko; M. Palczewska

doi:10.1117/12.280743

14 July 1997 High-resolution PITS studies of deep-level defects in semi-insulating GaAs and InP

Pawel Kaminski, Michal Pawlowski, Roman Kozlowski, Robert Cwirko, M. Palczewska

Proceedings Volume 3178, Solid State Crystals: Growth and Characterization; (1997) https://doi.org/10.1117/12.280743
Event: XII Conference on Solid State Crystals: Materials Science and Applications, 1996, Zakopane, Poland

Abstract

Deep states in semi-insulating GaAs and InP are investigated by high resolution photo-induced transient spectroscopy (PITS). The results exemplify new potentialities of the improved PITS technique.

Citation Download Citation

Pawel Kaminski, Michal Pawlowski, Roman Kozlowski, Robert Cwirko, and M. Palczewska "High-resolution PITS studies of deep-level defects in semi-insulating GaAs and InP", Proc. SPIE 3178, Solid State Crystals: Growth and Characterization, (14 July 1997); https://doi.org/10.1117/12.280743

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