Effect of argon or nitrogen preamorphized implant on SALICIDE formation for deep submicron CMOS technology

Chaw Sing Ho; Kin Leong Pey; Harianto Wong; R. P. Gamani Karunasiri; Soo-Jin Chua; Kong Hean Lee; Ying Tang; Sang Min Wong; Lap Hung Chan

doi:10.1117/12.280547

14 August 1997 Effect of argon or nitrogen preamorphized implant on SALICIDE formation for deep submicron CMOS technology

Chaw Sing Ho, Kin Leong Pey, Harianto Wong, R. P. Gamani Karunasiri, Soo-Jin Chua, Kong Hean Lee, Ying Tang, Sang Min Wong, Lap Hung Chan

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Proceedings Volume 3183, Microlithographic Techniques in IC Fabrication; (1997) https://doi.org/10.1117/12.280547
Event: ISMA '97 International Symposium on Microelectronics and Assembly, 1997, Singapore, Singapore

Abstract

A Ti-SALICIDE process incorporating an argon or nitrogen- amorphization implantation prior to silicidation to enhance the C54-TiSi₂ formation for deep submicron CMOS devices is presented. It was found that by incorporation a high- temperature titanium deposition at 400 degrees C together with argon-amorphization at a dosage of 3 X 10¹⁴ cm^-2, excellent sheet (rho) was obtained for gate lengths down to 0.25 micrometers . The improvement seen using a lower temperature deposition was relatively less. We postulate that the higher deposition temperature ensures that the C54 phase is nucleated before the C49 phase forms large grains. No noticeable difference was observed for dosages ranging between 3 X 10¹⁴ cm^-2 and 6 X 10¹⁴ cm^-2 for the argon implant. In the case for nitrogen-amorphization, the improvement seen on the narrow polySi gate was also promising. The impact of dopants on silicidation was evaluated nd discussed. Drawbacks of this technique appear to manifest in the compromised integrity of the source/drain junctions, and higher gate-to- source drain leakages, as evident in the case of argon and nitrogen amorphization implants. The anomalous leakage behavior observed for both argon and nitrogen was however not evident in the case of the arsenic implant. Comparable performance to the SALICIDE process with no pre- amorphization with respect to the leakage parameters was achieved for the arsenic-amorphized wafers.

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Chaw Sing Ho, Kin Leong Pey, Harianto Wong, R. P. Gamani Karunasiri, Soo-Jin Chua, Kong Hean Lee, Ying Tang, Sang Min Wong, and Lap Hung Chan "Effect of argon or nitrogen preamorphized implant on SALICIDE formation for deep submicron CMOS technology", Proc. SPIE 3183, Microlithographic Techniques in IC Fabrication, (14 August 1997); https://doi.org/10.1117/12.280547

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KEYWORDS

Argon

Nitrogen

CMOS technology

Arsenic

CMOS devices

Neodymium

Ranging

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