Single-sided multilevel structure for silicon pressure transducers by masked-maskless etching technology

Heng Yang; Jianjun Ren; Minhang Bao; Shaoqun Shen

doi:10.1117/12.284479

5 September 1997 Single-sided multilevel structure for silicon pressure transducers by masked-maskless etching technology

Heng Yang, Jianjun Ren, Minhang Bao, Shaoqun Shen

Author Affiliations +

Proceedings Volume 3223, Micromachining and Microfabrication Process Technology III; (1997) https://doi.org/10.1117/12.284479
Event: Micromachining and Microfabrication, 1997, Austin, TX, United States

Abstract

A novel singled-sided multilevel island-beam-diaphragm structure has been designed and fabricated for an extremely high sensitivity pressure transducers by using a novel anisotropic etching technology called masked-maskless anisotropic etching technology. The structure consists of two small islands for overrange protection, two shallow masses for stress concentration, three thin beams on a deep-etched thin diaphragm for piezoresistors location. A prototype pressure transducer of 400 pa operation range and 0.6% nonlinearity has been tested.

Citation Download Citation

Heng Yang, Jianjun Ren, Minhang Bao, and Shaoqun Shen "Single-sided multilevel structure for silicon pressure transducers by masked-maskless etching technology", Proc. SPIE 3223, Micromachining and Microfabrication Process Technology III, (5 September 1997); https://doi.org/10.1117/12.284479

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