Paper
13 September 1982 Application Of Wafer Probe Techniques To The Evaluation Of Projection Printers
C. P. Ausschnitt, T. A. Brunner, S. C. Yang
Author Affiliations +
Abstract
As feature sizes and overlay tolerances shrink to keep pace with the increase in integrated circuit complexity, there is a concomitant need to advance the methods used to characterize and compare the performance of lithographic instruments. The electrical probe measurement technique has emerged as the most accurate, most effective approach to lithographic evaluation. We demonstrate the versatility of the technique as applied to state-of-the-art 1:1 projection printers. Among the characteristics of projection printers discussed are linewidth uniformity, focus and exposure latitude, pellicle mask protection, and distortion and alignment contributions to overlay accuracy.
© (1982) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
C. P. Ausschnitt, T. A. Brunner, and S. C. Yang "Application Of Wafer Probe Techniques To The Evaluation Of Projection Printers", Proc. SPIE 0334, Optical Microlithography I: Technology for the Mid-1980s, (13 September 1982); https://doi.org/10.1117/12.933555
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CITATIONS
Cited by 4 scholarly publications.
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KEYWORDS
Semiconducting wafers

Photomasks

Printing

Pellicles

Lithography

Overlay metrology

Optical alignment

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