Experimental verification of a new physically based low-energy (<5 keV) ion implant model

Borna J. Obradovic; Steven J. Morris; Michael F. Morris; Shiyang Tian; Geng Wang; K. Beardmore; Charles M. Snell; J. Jackson; S. Baummann; Al F. Tasch Jr.

doi:10.1117/12.323984

4 September 1998 Experimental verification of a new physically based low-energy (<5 keV) ion implant model

Borna J. Obradovic, Steven J. Morris, Michael F. Morris, Shiyang Tian, Geng Wang, K. Beardmore, Charles M. Snell, J. Jackson, S. Baummann, Al F. Tasch Jr.

Author Affiliations +

Proceedings Volume 3506, Microelectronic Device Technology II; (1998) https://doi.org/10.1117/12.323984
Event: Microelectronic Manufacturing, 1998, Santa Clara, CA, United States

Abstract

Accurate modeling of ultra-low energy ion implantation is becoming increasingly more important as MOS devices shrink to deep submicron dimensions, and the required junction depths become shallower than 50 nm. To this end, an efficient Monte Carlo ion implantation model based on a substantially modified Binary Collision Approximation (BCA) has been developed and implemented in UT-MARLOWE. The model eliminates the asymptotic path approximation and explicitly includes 3-body interactions, allowing for accurate modeling of ultra-low energy collisions. In this paper, we report on the experimental verification of the model, as well as refinements and corrections subsequently introduced. This paper also discusses the difficulties in obtaining accurate SIMS profiles for ultra-shallow implants, and methods for overcoming them. Surface effects are also discussed, and their impact on the dose-dependence of the profiles is examined. The model has been verified for arsenic and boron, for energies down to 1 keV and 500 eV, respectively. This new model is found to be in good agreement with the experimental data.

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Borna J. Obradovic, Steven J. Morris, Michael F. Morris, Shiyang Tian, Geng Wang, K. Beardmore, Charles M. Snell, J. Jackson, S. Baummann, and Al F. Tasch Jr. "Experimental verification of a new physically based low-energy (<5 keV) ion implant model", Proc. SPIE 3506, Microelectronic Device Technology II, (4 September 1998); https://doi.org/10.1117/12.323984

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KEYWORDS

Ions

Scattering

Silicon

Chemical species

Oxides

Arsenic

Electrons

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