Self-aligned silicide process technology for sub-0.25-um geometries

Ted Regan White; Dave Kolar; Mohamed Jahanbani; Larry E. Frisa; Rajan Nagabushnam; Harry Chuang; Paul Tsui; Jeff Cope; Larry Pulvirent; Scott Bolton

doi:10.1117/12.323957

4 September 1998 Self-aligned silicide process technology for sub-0.25-μm geometries

Ted Regan White, Dave Kolar, Mohamed Jahanbani, Larry E. Frisa, Rajan Nagabushnam, Harry Chuang, Paul Tsui, Jeff Cope, Larry Pulvirent, Scott Bolton

Author Affiliations +

Proceedings Volume 3506, Microelectronic Device Technology II; (1998) https://doi.org/10.1117/12.323957
Event: Microelectronic Manufacturing, 1998, Santa Clara, CA, United States

Abstract

This work compares the extendibility of titanium with pre- deposition amorphizing implant (PAI) and cobalt salicides to sub-0.25 micrometer technologies. Cobalt salicide has low sheet resistance and a tighter distribution of sheet resistances than titanium salicide with PAI for narrow linewidths. The reaction of cobalt with silicon is not affected by dopants in the silicon as the reaction of titanium is. Less cobalt need be deposited than titanium for a given sheet resistance target. Cobalt salicide requires fewer process steps than titanium salicide with PAI. Cobalt salicide has lower diodes for shallow junctions, requires a smaller thermal budget, and provides a lower contact resistances than titanium salicide. Thus, cobalt salicide process technology has better process control, is more compatible with sub-0.25 micrometer devices, and more compatible with interlayer connections than titanium salicide with PAI.

Citation Download Citation

Ted Regan White, Dave Kolar, Mohamed Jahanbani, Larry E. Frisa, Rajan Nagabushnam, Harry Chuang, Paul Tsui, Jeff Cope, Larry Pulvirent, and Scott Bolton "Self-aligned silicide process technology for sub-0.25-μm geometries", Proc. SPIE 3506, Microelectronic Device Technology II, (4 September 1998); https://doi.org/10.1117/12.323957

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