Paper
19 August 1998 High-power 980-nm InGaAs/GaAs/AlGaAs window structure lasers fabricated by impurity-free vacancy diffusion
ZunTu Xu, Guowen Yang, Tao Yin, Peng Lian, Bingchen Li, Jingming Zhang, Guo Gao, Junying Xu, Lianhui Chen, Guangdi Shen
Author Affiliations +
Proceedings Volume 3547, Semiconductor Lasers III; (1998) https://doi.org/10.1117/12.319652
Event: Photonics China '98, 1998, Beijing, China
Abstract
For the first time, we report on the 980 nm InGaAs/GaAs/AlGaAs strained quantum well lasers with window structure in regions near the laser facet fabricated by impurity-free vacancy diffusion for quantum well intermixing. In the fabricating procedure, SrF2 was used as a film suppressing the quantum well intermixing. 3 micrometers - stripe ridge waveguide lasers with window region of 25 micrometers at each end exhibit a high slope efficiency of 0.8 W/A and a threshold current of 20 mA. The characteristics are comparable with that of conventional lasers. Catastrophic optical mirror damage is not observed at thermal limited powers as high as 360 mW. Accelerated lifetesting at 100 mW and 50 degree(s)C shows devices to have good reliability.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
ZunTu Xu, Guowen Yang, Tao Yin, Peng Lian, Bingchen Li, Jingming Zhang, Guo Gao, Junying Xu, Lianhui Chen, and Guangdi Shen "High-power 980-nm InGaAs/GaAs/AlGaAs window structure lasers fabricated by impurity-free vacancy diffusion", Proc. SPIE 3547, Semiconductor Lasers III, (19 August 1998); https://doi.org/10.1117/12.319652
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KEYWORDS
Quantum wells

Diffusion

Annealing

High power lasers

Laser damage threshold

Reliability

Semiconducting wafers

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