Leakage current reduction of metal-semiconductor-metal photodetectors by using a thin interfacial silicon dioxide layer

Myron Seto; C. Rochefort; S. de Jager

doi:10.1117/12.342794

19 March 1999 Leakage current reduction of metal-semiconductor-metal photodetectors by using a thin interfacial silicon dioxide layer

Myron Seto, C. Rochefort, S. de Jager

Author Affiliations +

Proceedings Volume 3630, Silicon-based Optoelectronics; (1999) https://doi.org/10.1117/12.342794
Event: Optoelectronics '99 - Integrated Optoelectronic Devices, 1999, San Jose, CA, United States

Abstract

In this report, we show that a thin interfacial silicon dioxide layer placed between the Schottky metal and the silicon substrate reduces the leakage current of a metal- semiconductor-metal photodetector. We find the optimal interfacial oxide layer to be about 3 or 4 nm thick and is made by dry furnace oxidation of the silicon substrate at 800 degrees Celsius, taken from a 0.18 micrometer CMOS process normally used to make the gate oxide. As compared to a metal- semiconductor-metal detector without this oxide layer, we measure a factor 5 reduction in leakage current density to 18 (mu) A/cm² at 5 V, a weaker increase in dark current with bias, and a factor 3 improvement in photoresponsivity to 0.35 A/W at 635 nm wavelength. Additionally, we compare Schottky barrier height, effective Richardson constant, and capacitance measurements between photodetectors made with and without this interfacial oxide.

Citation Download Citation

Myron Seto, C. Rochefort, and S. de Jager "Leakage current reduction of metal-semiconductor-metal photodetectors by using a thin interfacial silicon dioxide layer", Proc. SPIE 3630, Silicon-based Optoelectronics, (19 March 1999); https://doi.org/10.1117/12.342794

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