EUV interferometric lithography for resist characterization

Harun H. Solak; Dongxing He; Wai-Kin Li; Franco Cerrina; B. H. Sohn; Xiao Min Yang; Paul F. Nealey

doi:10.1117/12.351099

25 June 1999 EUV interferometric lithography for resist characterization

Harun H. Solak, Dongxing He, Wai-Kin Li, Franco Cerrina, B. H. Sohn, Xiao Min Yang, Paul F. Nealey

Proceedings Volume 3676, Emerging Lithographic Technologies III; (1999) https://doi.org/10.1117/12.351099
Event: Microlithography '99, 1999, Santa Clara, CA, United States

Abstract

We report printing of sub-20nm line/space patterns by Interferometric Lithography technique with EUV light for the first time. EUV lithography is pursued as one of the candidate next generation lithography technologies. New photoresist materials need to be developed and characterized for this spectral region mainly because of high absorption coefficients of materials. EUV interferometric lithography is a useful tool for testing of materials with high resolution features especially because EUV lithographic systems are still under early development phases. It provides a cost effective and simple way of achieving this without the need for complicated imaging system. We employed a Lloyd's Mirror Interferometry scheme with monochromatized undulator light from an electron storage ring. The technique is described and results showing the printed patterns are presented. Potential uses of the method for lithography research are discussed.

Citation Download Citation

Harun H. Solak, Dongxing He, Wai-Kin Li, Franco Cerrina, B. H. Sohn, Xiao Min Yang, and Paul F. Nealey "EUV interferometric lithography for resist characterization", Proc. SPIE 3676, Emerging Lithographic Technologies III, (25 June 1999); https://doi.org/10.1117/12.351099

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