Aerial image improvements on the Intel MET

Roman Caudillo; Todd Younkin; Steve Putna; Alan Myers; Yashesh Shroff; Terence Bacuita; Grant Kloster; Erik Sohmen

doi:10.1117/12.849142

22 March 2010 Aerial image improvements on the Intel MET

Roman Caudillo, Todd Younkin, Steve Putna, Alan Myers, Yashesh Shroff, Terence Bacuita, Grant Kloster, Erik Sohmen

Proceedings Volume 7636, Extreme Ultraviolet (EUV) Lithography; 76363I (2010) https://doi.org/10.1117/12.849142
Event: SPIE Advanced Lithography, 2010, San Jose, California, United States

Abstract

Since its installment in 2004, Intel's extreme ultraviolet (EUV) micro-exposure tool (MET) has demonstrated significant improvements in ultimate resolution capability. Initially capable of printing 45nm half-pitch (HP) lines with a 160nm depth of focus (DOF), it is now capable of printing 22nm HP lines with up to a 275nm DOF and demonstrating modulation down to 18nm HP. Initial improvements in resolution have been chiefly attributable to the maturation of EUV masks and photoresists. Recent improvements that have enabled the 22nm HP imaging with a sizeable process window are largely due to new illumination options that have become available as a result of recent tool upgrades. In particular, the installation of a new nested Wolter collector with an additional outer shell that extended the maximum partial coherence (σ) from 0.55 to 0.68, in conjunction with an updated pupil wheel and apertures, has enabled new rotated quadrapole and on-axis dipole illumination settings with 0.36 inner σ and 0.68 outer σ. Here we present simulated contrast curves alongside the experimental imaging results for the Intel MET using the newly available quadrapole and on-axis dipole illumination settings and discuss our future plans for continued improvements to the Intel MET aerial image.

Citation Download Citation

Roman Caudillo, Todd Younkin, Steve Putna, Alan Myers, Yashesh Shroff, Terence Bacuita, Grant Kloster, and Erik Sohmen "Aerial image improvements on the Intel MET", Proc. SPIE 7636, Extreme Ultraviolet (EUV) Lithography, 76363I (22 March 2010); https://doi.org/10.1117/12.849142

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