Nanometer patterning using ma-N 2400 series DUV negative photoresist and electron beam lithography

Anya Voigt; Harald Elsner; H. G. Meyer; Gabi Gruetzner

doi:10.1117/12.351078

25 June 1999 Nanometer patterning using ma-N 2400 series DUV negative photoresist and electron beam lithography

Anya Voigt, Harald Elsner, H. G. Meyer, Gabi Gruetzner

Proceedings Volume 3676, Emerging Lithographic Technologies III; (1999) https://doi.org/10.1117/12.351078
Event: Microlithography '99, 1999, Santa Clara, CA, United States

Abstract

Results of electron beam exposure of a DUV sensitive negative tone photoresists composed of a novolak/aromatic bisazide system are presented. Contents of the components of the resist solution were varied to cover a wide range of film thicknesses and to attain optimal performance of the resist. Dense patterns with dimensions of 100 nm and below of the resists patterned by electron beam exposure demonstrate its excellent resolution capability and the possibility to generate patterns with steep side walls and high aspect ratios.

Citation Download Citation

Anya Voigt, Harald Elsner, H. G. Meyer, and Gabi Gruetzner "Nanometer patterning using ma-N 2400 series DUV negative photoresist and electron beam lithography", Proc. SPIE 3676, Emerging Lithographic Technologies III, (25 June 1999); https://doi.org/10.1117/12.351078

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