Characterization of porous silicon for solar cell application by atomic force microscopy

I. Simkiene; Valentinas J. Snitka; Kestutis Naudzius; Vaidas Pacebutas; Mindaugas Rackaitis

doi:10.1117/12.341190

10 March 1999 Characterization of porous silicon for solar cell application by atomic force microscopy

I. Simkiene, Valentinas J. Snitka, Kestutis Naudzius, Vaidas Pacebutas, Mindaugas Rackaitis

Author Affiliations +

Proceedings Volume 3680, Design, Test, and Microfabrication of MEMS and MOEMS; (1999) https://doi.org/10.1117/12.341190
Event: Design, Test, and Microfabrication of MEMS/MOEMS, 1999, Paris, France

Abstract

The anodically etched macroporous and nanoporous silicon layers (PS) were tested in order to determine their surface roughness dependence eon fabrication method. Porous silicon layers were obtained by electrochemical etching of n-type wafers, and then highly doped. Deep P⁺ layers were prepared by boron diffusion into the PS from spin-on glass glasses. The structure of PS surface of solar cells obtained was examined by atomic force microscopy. The system of PS coated with nanoporous PS as a antireflection coating exhibited a uniform macroarray of regular square and faceted large features of various sizes as a texturisated solar cell with average 1.43 micrometers high and computed roughness parameter R_z - 2.37 micrometers . For the same macroporous silicon sample without additional nanoporous silicon layer computed R_z was 4.84 micrometers . This could be explained by electropolishing of macroporous silicon surface. The obtained results confirm that AFM can be employed for the accurate measurement of the shape of macroporous silicon covered by the nanoporous silicon layer.

Citation Download Citation

I. Simkiene, Valentinas J. Snitka, Kestutis Naudzius, Vaidas Pacebutas, and Mindaugas Rackaitis "Characterization of porous silicon for solar cell application by atomic force microscopy", Proc. SPIE 3680, Design, Test, and Microfabrication of MEMS and MOEMS, (10 March 1999); https://doi.org/10.1117/12.341190

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