Temperature stability of p-n CdxHg1-xTe structures formed by ion beam milling

Igor I. Izhnin; Aleksandr I. Izhnin; Kurban R. Kurbanov; Bogdan B. Prytuljak

doi:10.1117/12.344752

8 April 1999 Temperature stability of p-n Cd_xHg_1-xTe structures formed by ion beam milling

Igor I. Izhnin, Aleksandr I. Izhnin, Kurban R. Kurbanov, Bogdan B. Prytuljak

Proceedings Volume 3725, International Conference on Solid State Crystals '98: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology; (1999) https://doi.org/10.1117/12.344752
Event: International Conference on Solid State Crystals '98, 1998, Zakopane, Poland

Abstract

The influence of thermal annealing on electrical properties of p-n structures formed by ion beam milling (IBM) on vacancy doped Cd_xHg_1-xTe (x equals 0.205) single crystals with p (77 K) equals 5.8(DOT)10¹⁵ cm^-3 was investigated. After IBM of the initial samples the n-type layers were created with the thickness about 10 (mu) and electron concentration of the main part of n-type layers 5(DOT)10¹⁴ cm^-3. P-n structures were annealed in air at 85, 120 and 160 degree(s)C during 1, 2, and 4 hours. Degradation of the p-n structure after every annealing step was estimated on changes of the Hall coefficient dependence of magnetic field. It was revealed that degradation of the p-n structure took place due to progressive thickness decreasing of n-layer through Hg passing to intersites and vacancy creation. The critical temperature during technology steps is equal about 100 degree(s)C.

Citation Download Citation

Igor I. Izhnin, Aleksandr I. Izhnin, Kurban R. Kurbanov, and Bogdan B. Prytuljak "Temperature stability of p-n Cd_xHg_1-xTe structures formed by ion beam milling", Proc. SPIE 3725, International Conference on Solid State Crystals '98: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology, (8 April 1999); https://doi.org/10.1117/12.344752

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