Paper
7 September 1999 Electrical and optical properties of indium tin oxide films prepared by pulsed magnetron sputtering
Hui-Wen Chou, W. J. Lee, Rung-Ywan Tsai, Yuen Keun Fang, C. C. Chen
Author Affiliations +
Abstract
Indium tin oxide (ITO) thin films were prepared by unipolar and bipolar dc-pulsed magnetron sputtering in a mixture of argon and oxygen onto the unheated glass substrates. The target of ITO with 10 weight percent tin is used. The influences of polar modes, output frequencies, and on times and off times on the optical, electrical and structural properties of ITO films are investigated. The correlations between the deposition parameters and the film properties are discussed. An optimal condition based on the polar mode and frequency of reactive dc-pulsed sputtering for obtaining the high transmittance and low resistivity of ITO films is suggested.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hui-Wen Chou, W. J. Lee, Rung-Ywan Tsai, Yuen Keun Fang, and C. C. Chen "Electrical and optical properties of indium tin oxide films prepared by pulsed magnetron sputtering", Proc. SPIE 3738, Advances in Optical Interference Coatings, (7 September 1999); https://doi.org/10.1117/12.360113
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KEYWORDS
Sputter deposition

Transmittance

Oxygen

Glasses

Optical properties

Information operations

Tin

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