Characterization of tungsten silicide (WSix) film grown by chemical vapor deposition (CVD)

Fazla Rabbi M.B. Hossain; Satheesh Ambadi; Richard Winer; Ken Kitt; Carlos Garcia; Jeff Pearse

doi:10.1117/12.360567

1 September 1999 Characterization of tungsten silicide (WSix) film grown by chemical vapor deposition (CVD)

Fazla Rabbi M.B. Hossain, Satheesh Ambadi, Richard Winer, Ken Kitt, Carlos Garcia, Jeff Pearse

Proceedings Volume 3881, Microelectronic Device Technology III; (1999) https://doi.org/10.1117/12.360567
Event: Microelectronic Manufacturing '99, 1999, Santa Clara, CA, United States

Abstract

The objective of this work is to evaluate a well-known low resistance refractory metal silicide such as tungsten silicide (WSi_x) for use as a gate electrode in order to achieve faster switching speed. However, the deposition of a WSi_x film in high aspect ratio trenches is difficult in terms of step coverage as well as adhesion when using a low pressure chemical vapor deposition technique. The deposition canditions need to be carefully tweaked to achieve satisfactory step coverage and film thickness. This paper focuses on the deposition conditions of WSi_x films onto boron doped poly-Si gate material to achieve higher step coverage in the trenches.

Citation Download Citation

Fazla Rabbi M.B. Hossain, Satheesh Ambadi, Richard Winer, Ken Kitt, Carlos Garcia, and Jeff Pearse "Characterization of tungsten silicide (WSix) film grown by chemical vapor deposition (CVD)", Proc. SPIE 3881, Microelectronic Device Technology III, (1 September 1999); https://doi.org/10.1117/12.360567

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