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Bulk Hg0.8Cd0.2Te crystals still are widely used as a base material for manufacturing IR photoreceivers for the 8-14 micrometers wavelengths range. As these purposes need the material with high mobility of electrons and very low concentration of impurities, problems of purity of the components, used for preparation of it, acquire prime significance.
K. R. Kurbanov andV. V. Bogoboyashchiy
"Comparative study of bulk Hg0.8Cd0.2Te crystals grown from initial components of varying purity", Proc. SPIE 3890, Fourth International Conference on Material Science and Material Properties for Infrared Optoelectronics, (4 November 1999); https://doi.org/10.1117/12.368413
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K. R. Kurbanov, V. V. Bogoboyashchiy, "Comparative study of bulk Hg0.8Cd0.2Te crystals grown from initial components of varying purity," Proc. SPIE 3890, Fourth International Conference on Material Science and Material Properties for Infrared Optoelectronics, (4 November 1999); https://doi.org/10.1117/12.368413