GaAs/GaAlAs quantum well (QW) structures for graded index (GRIN) near IR injection lasers have been studied by polarization dependent photocurrent spectroscopy in the spectral region of QW transitions and in a wide range of temperatures 20 K <EQ T <EQ 375 K. The photocurrent has been measured under short-circuit conditions for the electric vector of the light wave parallel to the plane of the waveguide (TE) as well as perpendicular to the plane of the waveguide (TM). Distinct edges are observed in the quantum efficiency spectra and attributed to the onset of transitions form the heavy hole to electron and light hole to electron subbands, respectively. The observation of different spectral features in TE and TM spectra is discussed in terms of selection rules and mode coupling into the waveguide. Edge positions are compared with calculations of the well states. Coulomb interaction manifests itself in the occurrence of n equals 1 excitonic lines at the hh1-e1, 1h1-e1 and 1h2-e2 subband edges. Temperature dependent measurements indicate mechanisms for carrier escape form the QW. At intermediate temperatures the photocurrent is thermally activated, an explanation in terms of thermionic emission theory is given, and the justification of assuming thermalized non-equilibrium carriers is discussed for different transitions. The observed activation energy is correlated with the energy scale in the QW. At low temperatures the temperature dependence is weak, carrier escape is explained by tunnelling. At the highest temperatures the quantum efficiency decreases again, this is attributed to the growing influence of recombination.

This paper compares the technical merits of two IR detector arrays technologies; photovoltaic HgCdTe and quantum well IR photoconductors (QWIPs). It is clearly shown that long wavelength IR (LWIR) QWIP can not complete with HgCdTe photodiode as the single device especially at higher temperature operation due to fundamental limitations associated with intersubband transitions. However, the advantage of HgCdTe is less distinct in temperature range below 50 K due to problems involved in a HgCdTe material. Even though that QWIP is a photoconductor, several its properties such as high impedance, fast response time, long integration time, and low power consumption, well comply requirements of fabrication large focal plane arrays. Due to the high material quality at low temperature, QWIP has potential advantages over HgCdTe for very LWIR FPA applications in terms of the array size, uniformity, yield and cost of the systems.

Narrow gap Pb_1-xSn_xSe and PbTe layers grown epitaxially on Si(111)-substrates by molecular beam epitaxy (MBE) exhibit high quality despite the large lattice and thermal expansion mismatch. A buffer layer of CaF₂ is employed for compatibility. Due to easy glide of misfit dislocations in the lead chalcogenide layers, thermal strains relax even at cryogenic temperatures and after many temperature cycling. This is partly due to the NaCl- structure of lead salts and at variance to the zinkblende- type semiconductors. In addition, the high permittivity of lead chalcodenides which effectively shields the electric fields from charged defects makes the materials rather forgiving, i.e. higher quality devices are obtained from lower quality material, again at variance to Hg_1-xCd_xTe or GaAs related compounds. Photovoltaic p-n or Schottky-barrier sensor arrays are delineated by using standard photolithography. At low temperatures, the ultimate sensitivities are presently limited by defects, mainly dislocations. At higher temperatures, the ultimate theoretical sensitivity have been obtained in Schottky barrier devices, this despite the large mismatch and only 3 micrometers thickness of the layers. Due to the rather low temperatures used during the MBE and delineation, sensor arrays are obtained by postprocessing even on active Si- substrates. We describe ways to further improve device performance by lowering the dislocation densities in the lattice mismatched layers. This is achieved by temperature rampings, which drive out the threading dislocations from the active parts of the sensors. Presently, densities of 1 X 10⁶ cm^-2 in layers of a few micrometer thickness are obtained. These densities are sufficiently low in order not to dominate the leakage currents in real devices even at 80K temperatures.

The physical mechanism for creation of intraband population inversion between levels of quantum dots under injection of electron-hole pairs of suggested. The method is based on employment of generation of interband radiation providing fast depopulation of quantum dot ground level. Spontaneous far-IR radiation from diode laser structures with InGaAs/AlGaAs quantum dots connected with intraband hole and/or electron transitions between levels of size quantization in quantum dots was found and investigated for the first time. Spontaneous far-IR radiation is observed only under simultaneous generation of stimulated near-IR radiation connected with interband carrier transitions. Far- IR emission is observed also from laser structures with InGaAs/GaAs quantum wells. Intensity of this radiation is about of order less then intensity of radiation from structures with quantum dots. Qualitative explanations of phenomena observed are proposed.

The stimulated emission of far IR radiation from uniaxially strained gapless Hg_1-xCd_xTe was observed experimentally. The mechanism of this effect is proposed with allowance of both the strain-induced transformation of energy spectrum and the transformation of impurity acceptor level in the gapless semiconductor.

Dynamic pyroelectric response of spin coated corona charged P(VDF/TrFE) copolymer films and commercial P(VDF/TrFE) films has been studied in a wide range of frequencies of radiation flux modulation. Investigation has been concentrated on the films with non-uniform distribution of pyroactivity through the film thickness. A low frequency pyroelectric resonance discovered earlier in commercially available PVDF films of various production has not been observed in the spin coated corona charged films and was weak pronounced in the commercial P(VDF/TrFE) copolymer films from 'Piezotech'. Results are explained with the assumption of significant role of prior stressed state in the polymer films for occurrence of pyroelectric resonance phenomena. Advantages of spin coated corona charged films for pyroelectric applications are discussed.

Backward parametric oscillation (BWO) is of very interest for developing of mirrorless parametric frequency converters in actual mid-IR range. The aim of our investigation is to continue the analysis of possibility of realizing phase matched BWO in planar nonlinear optical waveguides with various compositions and parameters. The carried out calculations show that with BWO in waveguides there are opposing factors to be considered, but phase matched solutions are found within wide range of mid-IR generation for mode orders rather small for such phenomena.

We have investigated changing of diffusion migration through thin heteroepitaxial layers of cadmium-mercury-telluride under stress influence, which have created by differences between thermal extension coefficients of layers and substrate. We have analyzed by numerical experiment cases homogeneous and exponential mechanical stress in 2 and 3 layers structure. It was studied the time evolution of diffusion concentration profiles of impurity through epitaxial layers under influence of different mechanical stresses.

Basically new induced polar dielectric media with controlled polarization properties and possessing unique physical characteristics as compared with the true pyroelectrics are advanced for IR optoelectronics.On the base of these effective pyroactive structures a new class of pyroelectric sensor for measurements of intense and super-intense laser fluxes for the spectral range from visible to middle IR is proposed. The first type sensors - multifunctional pyroelectric converters, the second type - pyroelectric transmission-type power sensors. Because it is impossible to get a high transmission of the true pyroelectrics due to the spontaneous electric moment, sensors of the second type are the devices operating on the tertiary pyroelectric effect, that has been registered in non-pyroelectrics, too.

The composition of subsurface region MZT has been studied using Rutherford backscattering spectroscopy (RBS) ions helium. Interrelation of the electrical properties of MIS structures with the result of RBS have been determinated. It is found that the effective surface charge is connected with composition stoichiometry variation of subsurface region semiconductor.

The current transport through GaAs/GaAlAs quantum well graded index (QW GRIN) injection lasers was studied by photocurrent spectroscopy. The quantum efficiency is assumed to be proportional to the absorption coefficient. The observed absorption edges are attributed to transitions between different QW subbands. Measurements have been carried out with transverse electric (TE) and transverse magnetic (TM) light polarization in order to study the anisotropy due tot eh quantum well and the influence of the GRIN waveguide. Different spectroscopic modes have been compared, among them a setup with rotating polarizer. After background subtraction the observed edges can be compared with existing theories. The factors affecting the lineform are outlined.

The work deals with ternary nonlinear optical crystals of I- III-VI₂, and II-IV-V₂-type. Theoretical thermodynamic method of quasi-chemical reactions was used. Entropy of vacancy was calculated as sum of configuration and vibration components. For the first one uncertainty in positions of new bonds formed by unpaired electrons arisen when one of consistent atoms is deleted and uncertainty in new positions of relaxing atoms were considered. Standard Boltzmann expression for configuration entropy (Delta) S_conf equals (Sigma) klnw and geometry considerations were used. It was assumed that the vibration component is caused by change in vibration frequency of atoms surrounding formed vacancy. Change in length of bonds and in bonding force took into account. Approximate expression for vibration entropy change (Delta) S_vibr equals 3Nkln, geometry considerations and results of bonds lengths calculations were used.

The IR transmission spectra of HgCdTe epitaxial films grown on CdTe substrates were measured. The films investigated contain an exponential composition gradient. Optical density D vs the photon energy (omega) are analyzed both theoretically and experimentally. Theoretical calculations of D((omega) ) spectra were performed in the framework of the WKB approximation. The composition profile has been obtained from the fitting procedure. In order to reduce the total amount of the fitting parameters as well as to improve the accuracy of this procedure the differentiation of the D((omega) ) curves were performed.

The design, manufacture and optimum performance of a cut-on IR for the 8-14 micrometers is discussed. The filter is composed of PbTe/ZnS symmetrical stacks deposited on tow sides of a ZnSe(ZnS) substrate. The refractive index of PbTe was found to 5.6 and that of ZnS 2.15. In order to obtain the required pass/stop band profile the principal filter was composed of ten basic periods. The transparent in the mean IR-range multilayer coatings are stable of thermal cycling from 300 up to 8 K with steady optical characteristics in this temperature range. The average transmittance of filters was 75 percent in the desired spectral regions and was constant in the temperature interval 300-8 K. The effect of cooling on the position of the pass band edge of the interference multilayer thin-film coating is experimentally revealed. A model is suggested which explains the origin of low- temperature shift of the pass-band edge within the scope of variation in the optical thickness of a layer with the high refractive index. The result of the carried out numerical analysis are in well agreement with the experimental data and may be used for cryocorrection of the interference IR multilayer thin-film.

The properties of highly compensated quasiuniform films of Pb_1-xSn_xS, Pb_1-xCd_xS, (PbS)_1-x-(PbO)_x, Pb_1-xCd_xTe solid solutions with a sodium acceptor impurity are described in this work. The films were grown by the method of molecular beam epitaxy on BaF₂ substrates. It was shown that the films with different composition have the identical electric and photoelectric properties. Temperature dependences of Hall coefficient, dark resistivity and photoconductivity relaxation time have activation character. A high stability of electric and photoelectric parameters after thermal impact and after prolonged storage in the air was obtained.

The possibility to register radiant flow using transverse thermo-emf effect is considered. It is shown, that in optical transmission case there is a possibility to create convertors, allowing to control radiant flows in wide energy limits.

Calculation and manufacturing methods of (lambda) equals 2,5-30 micrometers range interference IR-filters with deep suppression of short-wave obstacles based on the CdSb semiconductor monocrystal substrates with intrinsic absorption edge at (lambda) equals 2,5 micrometers are suggested.

The theoretical and experimental investigations of the main zone parameters of the quaternary solid solutions CdMnGeTe and CdZnHgTe are represented in the given paper. As a result of these investigations the empirical formulae for the energy gap width and intrinsic carrier concentration in the wide range of the temperature and compositions are proposed. The results of the theoretical calculations agree well with the experimental data. On the base of these empirical expressions the calculation of the Schottky diode main parameters have been carried out.

Dark current dependence of silicon p-i-n photodiode on the p⁺-type layer location depth at the photodiode crystal back. It was revealed that the smallest specific values of dark current is obtained at 6-9 micrometers p⁺- type layer depth. Three mechanisms that explain the obtained results were considered: dislocational, metal impurities and strain influence on the metal - semiconductor edge.

Thin layers were prepared by quasi-balanced evaporation of stoichiometric polycrystalline CdAl(Ga)₂S(Se)₄ powder of form the Knudsen cells in vacuum deposition plant VUP-5M. The effect of substrate temperature and evaporation conditions on the composition of these compounds has been studied. Diagrams of stoichiometric composition, stoichiometric and critical condensation temperatures for these compounds were determined.

The peculiarities of a photovoltaic effect in Ti/n-Si Schottky contact and GaAs n-n⁺ junction at excitation wavelengths 10.6 micrometers , 2.8 micrometers and 2 micrometers has been investigated experimentally. When the incident photon hv energy is lower than Schottky barrier height the photoresponse nonlinearly depends on laser intensity. The results are interpreted by electron emission over the barrier due to multiphoton and multistep excitation. When hv is greater than the diffusion potential of GaAs n-n⁺ junction a linear relation between the photovoltage and the laser intensity is observed.

Carrier transport mechanisms in Hg_1-xCd_xTe photodiodes in the temperature range 70 divided by 150 K are discussed. Two major current mechanisms were included into balance equations of the p-n-junction: trap-assisted tunneling (TAT) and Schockley-Reed-Hall generation- recombination processes. For TAT Anderson's matrix element of the impurity ionization was used and the tunneling rate characteristics were calculated in the k-p approximation with the constant barrier field.Other current mechanism were included in consideration as additive contributions. Using donor and acceptor concentrations, trap level concentration, trap level energy, and in-junction trap level lifetimes as fitting parameters, we obtain a relatively good agreement with experimental data.

An energy diagram of a p-i-n junction made of compensated semiconductor materials involving electrically active deep recombination r-levels is proposed. The mechanism of current flow for forward bias under nonequilibrium charge carriers trapping and recombination in the high-resistance i-region formed due to the r-levels over compensation are analyzed. In the case of trapping: a) the nonequilibrium charge carriers lifetimes (tau) _n does not equal (tau) _p and the electron filing function f_n of r-levels are space- dependent; b) for injected carriers the potential wells separated by barriers are formed near then- and p-regions. An analysis of the corresponding recombination statistics gives a complicated shape of the I-V-curve, with a section where the ideality coefficient v varies in the 1 < v <EQ 2 and v > 2 divided by 4 ranges. Nonequilibrium charge carriers tunneling through the barriers is possible at low temperatures.

SQUID magnetic measurements have been performed on a series of PbTe narrow-gap semiconductors with n- and p-type conductivity in the field of temperatures 1.7-20 K and magnetic fields up to 1 Oe. Is shown that in a matrix PbTe are available microscopic inclusions of lead with the minimum sizes 1300 angstrom with concentration of atoms of lead in them N approximately (1 divided by 5) X 10¹⁸ cm^-3 and phase transition characteristic for II type superconductor.

The theoretical calculations of the far-IR absorption by composites with small metallic inclusions are performed. The main electrostatic assumption of electrically small inclusions in the case of high conductive particles in the far-IR range is not valid. The modified expressions for the dielectric and magnetic permeability of the metallic inclusions are obtained using Mie theory. The calculated absorption spectra of Pd-KCl composite in the far-IR region are in good agreement with experiment.

The XPS/XAES technique is applied to analyze the dominant electronic state of In, Ga, Ge impurities in PbTe single crystals doped above the point of Fermi level stabilization. It is shown that the effective electronic state of In impurity in PbTe can be represented as a mixture of 5s²5p¹ and 5s⁰5p³ configurations, while Ga impurity atoms are present in the donor configuration 4s⁰4p³. Oxidation state of Ge-atom is more than 2+. Vacancionic and interstitial clusters were revealed in Pb_1-xIn_xTe by x-ray diffusive scattering method.

Diffusion length (L) of minority carriers was determined in not intentionally doped Cd_0.93Zn_0.07Te single crystals by the EBIC method at temperatures 80-300K using an evaporated Au Schottky barrier for a separation of electron- hole pairs. The L values in P-(CdZn)Te were longer, than those of the binary CdTe and some showed a steep increase with decreasing temperature. The correlation of the diffusion length measurements with photoluminescence for the (CdZn)Te was observed. Temperature dependence of L for holes in N-(CdZn)Te fabricated by In diffusion were measured as well.

In this work we report the depth inhomogeneity study of MBE grown ZnSe, CdZnTe and ZnTe/(001) GaAs epilayers of different thickness by x-ray and depth resolved photoluminescence methods. Step etching and different wavelength excitation were used for this purpose. It is shown that all these epilayers consist of three regions with different extended defect and impurity concentrations: (i) near the interface one with high density of misfit dislocations and impurities concentration; (ii) the region with low extended defect and impurity concentration and (iii) near the top surface region with higher extended and point defect concentration. The deterioration of near top surface region increases with epilayer thickness. Influence of GaAs substrate preparation regimes on ZnSe layer growth and optical properties as well as the study of interdiffusion of Ga and Zn across the wafer-epilayer interface have been investigated. The possibility to use thin intermediate ZnTe layer with solid phase crystallization for blocking of the interdiffusion in ZnTe layers and improvement of epilayer photoluminescence characteristics have been explored.

The iron silicides samples were formed by annealing of iron films evaporated onto silicon wafers and capped with either amorphous silicon or SiO_x thin overlayers. Semiconducting FeSi₂ phase is formed by annealing at the temperatures from 550 degrees to 850 degrees. The optical properties of the FeSi₂ layers have been deduced from reflectance and transmittance measurements carried out in the temperature range of 77-380K. The spectral dependence of the absorption coefficient favors direct allowed transitions with forbidden energy gap of 0.87eV at the room temperate. The application of a simple three-parameter semiempirical formula to the temperature dependence of the direct energy gaps leads to the following best fit parameters: the band gap at zero temperature E_g(0) equals 0.895 +/- 0.0037eV, the dimensionless coupling parameter S equals 2.01 +/- 0.27, and the average phonon energy. By examining all the reported triplets of parameters for (beta) -FeSi₂ fabricated by different techniques and thermal processes, an obvious discrepancy can be found for the lattice coupling parameter and average phonon energy, although the bandgaps at 0K are very similar. Unlike the theoretical prediction and the earlier reported result our results do not show any evidence of a particularly strong electron-phonon interaction, which would give the ow carrier mobilities. From optical model for the thin film-substrate system we found the index of refraction to be 5-5.9 in the photon energy interval from 0.65 eV to 1.15 eV. There is also indication of an additional higher-energy absorption edge at 1.05 eV. (beta) - FeSi₂ seems to be an intriguing material where states with energies near the band edges permit ambiguous interpretation of the character of transitions. We also present the formulae for the reflectance and transmittance for the system thin film on substrate that better reflect the experimental conditions.

Hg_1-xCd_xTe epitaxial layers grown from Te-rich solution have been exposed to Gamma ray radiation up to 650 Grey using Co⁶⁰ and high energy oxygen radiation at 100Mev. The electrical resistivity, carrier density and Hall mobility values at 77K and IR transmission at 300K have been measured in n,p and compensated epilayers both before and after irradiation. These properties are very much affected by these radiations. In the uncompensated p-type epitaxial layers both types of radiation produced an increase in extrinsic carrier density and a corresponding decrease in Hall mobility. It is observed that both types of radiation have significant effect on the compensated layers and the degree of compensation is greatly reduced by the oxygen irradiation. The 100 Mev oxygen irradiation produced an apparent shift in the bandgap towards shorter wavelength and the absorption below the energy gap is reduced as shown by FTIR measurements, whereas Gamma ray radiation up to the dose 650 Grey did not have any effect on optical properties. These results show the ability of oxygen radiation to passivate the activity of residual impurities or defects.

The results of measurements of lifetime of charge carriers in epitaxial structures based on narrow gap Hg_1-xCd_xTe, grown by a method molecular-beam epitaxy are resulted at pulsing excitation by radiation on various lengths of waves.

Comparison between cases of longitudinal and transverse directions of uniaxial pressure and strong electric field, affected the bulk hole germanium, to use it for lasting in far IR region has been carried out. Conclusion about preference of crossed directions is made. Threshold pressure, at which stimulated radiation arises, independence of crystallographic direction, along which external influences are applied, is also discussed. The results of experimental investigations of the crossed directions of uniaxial pressure and electric current are given.

Photoionization cross section of holes localization on deep centers with short distance potential at their transitions to the valence band of the uniaxially deformed semiconductor like Ge has been calculated. Because of splitting both acceptor level and extremum of hole subbands, photoionization threshold splits also - four kinds of such transitions appear. While growing temperature, the alteration of population of splitted impurity states occurs. It result in changing contribution of each kind of transitions to the absorption coefficient. As deformation disturbs spherical symmetry of the problem, appreciable polarization dependence of absorption coefficient appears. The calculation is based on the general quantum mechanic formula with transition matrix element using wave function of impurity center under deformation.

The thermally induced currents (TIC) and instabilities of photoresponse in Pb_1-x-ySn_xGe_yTe(IN) films on BaF₂ substrates have been investigated at temperatures 4.2 < T < 30 K. The temperature T_M corresponding to maximum values of single TIC peaks appears to be extremely low varying from 6 K up to 14 K. The combined effect of lighting and slight heating of the sample from 4.2 K up to approximately 6 K results in photoresponse instabilities depending on the experimental regime. The results are interpreted in terms of thermal excitation of charge carriers from metastable impurity level.

The photoelectric and kinetic properties of n-PbTe(Ga) films prepare don the BaF₂ and Si substrates by hot wall epitaxy technique have been investigated in the temperature T interval 4.2 divided by 300 K. The photoelectric measurements show that all photosensitive samples may be divided into two groups characterized by positive and negative photosensitivity to IR-illumination at temperatures close to 4.2 K. The kinetics of positively photosensitive films is found to be similar to the kinetics of the bulk n-PbTe(Ga) single crystals of high resistance. The photoresponse of negatively photosensitive films appears to be composed from two parts. They are the dominant negative photosensitivity and a positive photoconductivity signal characterized by significantly faster kinetics. The experimental result are discussed in terms of DX-like behavior of the impurity centers.

On the example of the PbTe and Pb₀₇₇Sn₀₂₃Te on BaF₂ the possibility of using the weak magnetic field resistance technique for the evaluation of mismatch- thermally induced strains in semiconductors with multivalley band structure is discussed. Strain value and strain relaxation dynamics after many temperature cycles between room temperature and 77K have been investigated for n- and p-PbTe and PbSnTe epitaxial layers on BaF₂ substrates.

Far IR engineering finds more and more broad applications in the most various purposes, for example, for monitoring technological processes, environment monitoring, in medicine, etc. Last year the significant successes are reached in the technology of matrix photoreceivers basing on an application of monocrystalline epitaxial films of p-type monocrystalline narrow-gap solid solutions, MCT, having a number of advantages on comparison to bulk MCT.

The bandgap Eg is one of the main parameters of a semiconducting material, therefore development of precision methods of determination of Eg represents the important applied problem. Now this problem acquires the special significant due to extension of applications of semiconductive solid solutions, such as Hg_2-xCd_xTe and others, because Eg depends on the chemical compositions of the solution and varies from a sample to another one.

The preparation conditions of halogen doped (Cl,l) PbTe thin films have been studied. The influence of substrate and layer growth conditions on electrical and photoelectric properties are analyzed. The optimal regimens of growth of the initial layers are determined. Further, effective refraction coefficients of lead telluride films in dependence on the preparation methods were measured. It is estimated that the adding of halogen impurities into the charge increase the IR-sensitivity and makes possible a preparation of sensitive samples without annealing and reduces relaxation time. Besides, the data related to the interactions of a PbTe surface with an environment at room temperature testify to presence of the capture centers of a double nature.

The paper presents an approach for performance evaluation and parametric optimization for IR imagin system design. This approach is based on calculations and minimization of image distortion. It applies the criterion like minimization of normalized least-square image error. The proposed mathematical apparatus makes possible evaluation of the performance and calculation of optimal parameters that reduces image distortion caused by spatial filtering and noise. The paper illustrates the application of the posed techniques for scanning system performance analysis and design.

The magnetic susceptibility of initial n-Si single crystal with the current carrier concentration 1.2-10¹⁴ cm^-3 and the same crystals after uniaxial deformation up to 11 percent was measured by the Faraday method at room temperature in the range of 0.1-4 kOe. It was found that initial undeformed silicon samples were diamagnetic ones with susceptibility of -2.29- 10^-7 cm³g-¹ which is independent on the magnetic field strength. The presence of dislocations in silicon crystals essentially influences on the magnetic susceptibility, the dependence of the magnetic susceptibility on the magnetic field being strongly nonlinear. The non-resonance microwave response has been investigated using the ESR spectroscopy technique. The hysteresis of the microwave absorption was observed that is typical for a magnetic ordering. Possible explanation of unusual magnetic properties of silicon and the connection of these property with appearance of microcracks in strongly deformed silicon has been proposed.

In the current work the changes in a crystalline structure and the change of magnetic and resonant properties occurring in the powder of fullerite, deformed under conditions of free upsetting at room temperature have been investigated. The analysis of the ratio of the discovered broadening of x- ray reflexes allows believing that broadening is caused by microstresses, which have rather a great value. According to ESR research data the supposition has been made that torn off valence bonds of atoms of carbon, which appear because of mechanical damages under the deformation, are responsible for the changes of magnetic properties observed.

Peculiarities of anomalous photoelectromagnetic effect in p- Hg_1-xCd_xTe at low temperatures were observed experimentally. They can be unambiguously connected with the 'freezing out' of the holes. In this case the electron component of current becomes essential due to sharp asymmetry of the values of electron and hole mobilities. The transition of the anomalous photoelectromagnetic effect into normal one with the increase of H is connected with a decrease of effective length of a bipolar diffusion up to linear size of the space charge region.

Model of the influence of the shallow and deep impurity level profiles on the capacitance relaxation curves was made using the optimal parameter choice method. There were established that the shallow impurity profile decay and the deep impurity profile growth increase the dimensionless time. Besides it the shallow impurity profile growth and the deep impurity profile decay decrease. Such effects give rise the undervalue of the dimensionless capacitance (omega) for the first case and overvalue (omega) for the second one. The received expressions for increment d may be used for the quantitative estimation of the shallow and deep impurity profiles without procedure of the differentiation of the experimental C-t-curves. That permit to increase the accuracy of the impurity profile determination.

The light scattering differential cross-section by small identical spherical particles in nematic liquid crystal is numerically calculated at the infinitely rigid director anchoring with particles surface. It is taking into account the influence of the correlations between the positions of the particles.

A new approach to the constructing of the model Hamiltonian within the framework of the general tight-binding formalism is proposed. Considerable simplification of the conventional procedure of matrix element determination is achieved taking advantages of the group theory. It is shown, that the overlapping of wave functions centered on the neighboring lattice sites in arbitrary low-symmetric lattice may be counted up through the coupling integrals between atom-like states, as though these atoms should be placed at the same distance along the z-axis. It is pointed out, that the self- consistent ab-initio calculation scheme based on the general assumptions of the tight-binding model appears to be possible.

The mixed ferrites Li_0.5-0.5xCu_xFe_2.5-0.5x were prepared by the ceramic method. IR absorption and dielectric properties were used to investigate this ferrite. The IR spectra in the range from 200-1000 cm^-1 were reported. Mainly, tow bands were observed.

New expression for the concentration dependence of diffusion coefficient of ionized impurity in semiconductors which is valid the whole range of carrier degeneracy is derived. It is shown that due to reduction of the impurity field screening by mobile carriers at degenerate conditions the diffusion coefficient is a monotonously increasing function of the impurity concentration. Taking the band gap narrowing into account is found to result in a reduction of the diffusion coefficient in comparison with that corresponding to the case of unperturbed band structure, and a decreasing concentration dependence of the diffusion coefficient can be realized at relatively low impurity concentrations.

Measurements of the Hall coefficient and conductivity of not intentionally doped p-Hg_1-xCd_xTe samples at temperatures 4.2-300K are reported. A theoretical approximation of experimental data based on a solution of the electronic Boltzmann transport equation and subsequent fitting procedure is done giving a very good agreement between the experiment and calculation. The measurements are analyzed in the full temperature interval simultaneously using the same relevant model parameters in the doping, intrinsic and intermediate region as well. The three- acceptor-level model for one divalent acceptor and one monovalent residual acceptor is discussed. The precision of model parameters determined by this way is analyzed. A novel method to check the sample homogeneity is suggested.

It is shown that in electrodynamics there exist two mechanism of transferring a signal: (1) with the help of electromagnetic waves and (2) via the standing waves of the own field of a charged particle. In the former case, the transfer of a signal is carried out by quanta a light, and in the latter case, it is of a purely wave character and can occur instantaneously. The existence of instantaneous signals necessarily follows from the laws of electrodynamics as well as from the most general considerations. The results of the paper do not contradict the special theory of relativity because the ban of superluminal transfer of a signal, following at the first sight from kinematic reasons, is lifted in a natural way by the detailed consideration of dynamics of the process that gives rise to the occurrence of faster-than-light excitations. The basic possibility of superluminal information transfer follows from the fact that the charged self-acting particles become spatially extended objects and, therefore, the events, separated by space-like intervals, cease to be physically independent. The quantum theory of self-organization of electrodynamic systems indicative of the possibility of superluminal transfer of a signal with the help of the own field of a particle can serve as the basis for creation of essentially new means and systems of communication.

The contribution of superluminal excitations to the potential and vortex components of the potentials and electric and magnetic field strengths of electromagnetic field is considered. It is noted that imposing the boundary conditions, corresponding to a combination of retarded and advanced interactions, on the solution of the equations of electrodynamics enables one to explain the result of Kosyrev's observations, according to which for any space object three images registered by earthly detectors are available. The effect of relativity of physical processes caused by instantaneous signals is discussed. It is shown that this effect presents a way of predicting the behavior of ap physical system in future, provided its evolution is strictly determined. According to the results received, the abnormal optical phenomena, arising in the immediate vicinity of plasma flows, are natural manifestations of the own fields surrounding these flows. The mechanism of interaction-at-a-distance between bodies, caused by the instantaneous transfer of excitations of the own fie of charged particles, is considered. It is shown that because of the presence of the tail of electrons' wave function and of the own field, transmitting signals with superluminal sped, the photon teleportation is possible. The Principle of Self-Organization is formulated that operates the world and creates all its variety.

The paper theoretically investigates the peculiarities of carrier redistribution taking place in periodic semiconductor variable-gap multilayer structures during current transfer in the direction perpendicular to the layers. It is studied in detail the cases of homogeneously doped symmetric and asymmetric structures with linear coordinate dependence of energy gap. Current transport in variable multilayer structures is shown to accompany with the substantial spatial redistribution of minority carriers resulting in deviation of carrier concentration from its equilibrium value. At strong fields the practically constant carrier concentration is set up in almost the whole volume of structure for the exception of thin regions in the vicinity of the interfaces. In the case of asymmetric structures carrier redistribution can give rise to changing the total number of carriers what is displayed on current- voltage characteristics.

By means of computer modeling and numerical analysis it has been shown that redistribution of charge carriers in non- homogeneous semiconductor structures has significant contribution to the Hall effect and conductivity of these samples and produce incorrect data when electrophysical measurements are used for determining the semiconductor layer parameters. For semiconductor structures on the basis of HgCdTe solid alloys this effect may manifest in the case of narrow gap layer with p-conductivity on the n-type wide gap base. Such structures are of interest for manufacturing IR photodetectors.SO for their characterization the differential Hall and conductivity method should be used with great caution.

The effect of hydrostatic pressure on the galvanomagnetic properties has been investigated. It was shown that the hole concentration increase under pressure due to the motion of the energy bands at the Brillouin zOne L-point and the flow of electrons from the valence band to the radiation defect band E_t1. Obtained experimental data were used to determine the parameters of irradiation-induced defect band E_t1 by comparing theoretical and experimental pressure dependencies of hole concentration.

In this paper galvanomagnetic properties and photoconductivity kinetics in Pb_1-xGe_xTe alloys doped with Yb were investigated. The existing of Yb-induced level near the valence band top was established. High photosensitivity at temperature under 30 K and the effect of persistent photoconductivity at helium temperature were found. The photoconductivity kinetics revealed two types of relaxation processes: a fast one and a long duration one, that was explained assuming that doping with Yb leads to the formation of reconstructing Jahn-Teller centers in Pb_1-xGe_xTe alloys.

The phenomenon of Fermi-level 'pinning' was investigated in A²B⁶ compounds such as CdTe, ZnTe and others. By comparison of many data we have shown that the same energy E_FS equals 4, 9 eV is valid for A²B⁶ compounds as for A⁴and A³B⁵ semiconductors. On this basis the position of Fermi-level 'pinning' for A²B⁶ compounds within band-gaps is predicted. The nature of Fermi-level 'pinning' is discussed.

The temperature dependences of electrical conductivity (sigma) , Hall coefficient R_H and charge carrier mobility (mu) _H for tin telluride with different degrees of deviation from stoichiometry have been obtained in the range of 4.2-300K. It has been shown that in bulk and thin film samples with charge carrier concentrations up to p_H approximately equals 8 X 10 cm^-3 there is observed earlier known ferroelectric phase transition accompanied by anomalous drop in (sigma) and (mu) _H in the vicinity of T approximately equals 100 K. On the other hand, as p_H grows, there appear temperature anomalies of transport coefficients in the range of 135-150 and 200-215 K. THese anomalies are attributed to the phase transitions connected with cation vacancies redistribution over the crystal lattice with changing temperature. It has been shown that realization of these processes is controlled by charge carrier concentration and kinetic factors.

The temperature and concentration dependences of electrical conductivity (sigma) , Hall coefficient R_H and coefficient of thermo-e.m.f. S for the samples of the SnTe solid solutions are obtained. On the basis of experimental data the model of energy spectrum of SnTe doped with In taking into account the high concentration of nonstoichiometric vacancies in SnTe and variable valency of the In atoms is proposed. According to the model the valence band contains tow resonance bands corresponding to the In atoms localized in octa- and tetrahedral positions. The vacancy band is the lowest on the energy scale of the valence band, followed by impurity bands. The gaps and their temperature dependencies, carried mobilities in the different impurity bands are obtained. The doping mechanism of In introduced in different proportions with vacancies is determined by impurity band state occupation in consecutive order according to their location on the energy scale and by the Fermi level position. The Fermi level is located in one of the impurity bands depending on proportion of In¹⁺ and In³⁺ atoms and vacancies.

InSb_1-xBi_x solid solutions monocrystal structures with (Delta) Eg_80K equals 0,12eV were obtained using the modified Czochralski, zone and laser melting methods. A band structure of semiconductor InSb_1-xBi_x substitution solid solution is calculated by the empirical pseudopotential method. Spin-orbital interactions are also included in local calculations. Using the virtual-crystal approximation the composition and temperature dependencies of energy gap are studied. The results are in good agreement with available experimental data.

Shear moduli for (As₂Se₃)_{1- y}Ge_y(0<EQy<EQ0.3)), (As₂Se₃)_{1- y}(Ge₂Se₃)_y (0<EQy<EQv1) glasses have been calculated by the linear combination of atomic orbitals method. Linear thermal expansion coefficients for As₂Se_{3$, (As(subscript 2}Se₃)_0.9Ge_0.1, (As₂Se₃)_0.7Ge_0.3 and Ge₃₃As₁₂Se₅₅ films have been derived from thermal stress measurements. Correlation between theoretical and experimental thermal stress values for amorphous films has been made. The availability of the total stress minimization in multilayer structures based on the films under consideration has been shown.

A theoretical approach is formulated for the calculation of the macroscopic dielectric response of a collection of spheres at random positions embedded in a homogeneous medium. It is found that there are appreciable deviations from the Maxwell-Garnett formula. It is noted that with volume fraction increasing the pair multiple interactions between inclusions become significant. We also investigated numerically the way in which the absorption peak is modified by the contributions due to multiple interactions between inclusions.

The nonlinear dielectric properties of heterogeneous material are intensively studied during last time. It was discovered the effect of enormous enhancement for non-linear optical responses in composite material containing metal particles as inclusions. These metal particles are much smaller than a wavelength of the electromagnetic radiation but large enough to be considered a bulk material. Their typical size is several nonometers.

The second order susceptibility for difference-frequency mixing in a heterostructures with closely spaced levels are considered. We have described both the excitations of electrons from the couple of levels to the single level and the transition from the ground level to the couple of closely spaced levels. Parameters of the structures under consideration correspond to excitation by CO₂ laser and the photon energy for difference harmonic is around 10-20 meV.

In this work we carry out the investigation of the dynamical superlattices on nonequilibrium electrons and magnons in ferromagnetic semiconductors (FMSC) and their influence on the propagation and absorption of the electromagnetic waves in FMSC at the dynamical regime. The first and the second terms of the HF-current was calculated. It is shown that the presence of the dynamical superlattice of electron density will lead to the modulation of the electromagnetic wave absorption coefficient of FMSC, that can be detected by the changes of outgoing intensity of the sensing wave passed through FMSC crystal.

Numerical calculations are presented for the electron-hole plasma density dependence of the ground-state subband energies and carrier's wave functions in GaAs/Al_xGa_1-xAs quantum-well heterostructure subjected an electric field. We show that both the Hartree and exchange interactions cause the electron and hole self-energies to highly depend on the plasma density. In contrast, only a weak dependence of the spatial extent of the wave functions, due to exchange interactions, on the plasma density has been found.Our calculations also reveal a strong competition between the exchange and Hartree interactions as a function of plasma density, that in general, depends on the electric field and quantum-well width. The results of numerical calculations of the band-gap renormalization due to many- body effects are used to infer the bistable behavior of the quantum-well heterostructures in an electric field under near band-gap photoexcitation.

In this paper we review the key issues in CdTe substrate which influence the quality of mercury cadmium telluride epilayer grown by liquid phase epitaxy. The issues are crystallinity, defects such as tellurium precipitates and impurities. We discuss the conditions to grow good quality epilayers of Hg_1-xCd_xTe from Hg-rich and Te-rich solutions at 470 degrees C. The physical parameters such as surface morphology, composition, thickness, x-ray full width at half maximum and broadening parameter from electrolyte electroreflectance obtained in two cases are compared. It is shown that epilayers grown form Hg-rich solution have, better surface morphology, lower growth rate and crystallinity and broadening parameter similar to layers grown form Te-rich solution. Compositionally epilayers grown form Te-rich solution are more uniform. The quality of an epilayer grown form Te-rich solution deteriorates faster than grown from Hg-rich solution when the cooling rate is increased in excess of 2 degrees C/h.

The main results of complex physical-technological research for undoped and controllable doped with different impurities CdTe crystals are presented. THe doped by impurities of IV groups elements and isoelectronic impurities crystals, which characterizing high transmission in the wide spectral range, can be successfully used at the development and fabrication of high effective optical IR devices elements. Doping of elements with un-filled 3D-shells can greatly reduce a transparency of crystal in RI range of spectrum. The physical properties of semi-insulating CdTe:Ge(Sn) and CdTe:Ti(V,Ni) crystals determined by deep local levels, placed in the field of middle of forbidden band that specified admixtures stipulated by compensating action of in CdTe. Such crystals perspective for photorefractive using in telecommunicative networks.

In this paper laser induced shock wave (SW) influence on defect structure modification of ZnSe crystals with different accidental impurities concentration was investigated. It was analyzed spectra of photoconductivity, thermally stimulated conductivity and temperature dependencies of dark and photocurrent of ZnSe before and after SW passing. Experimental data analysis shows that changes of physical properties of ZnSe crystals under SW passing strongly depend on accidental impurities concentration. Mechanisms of defect formation under SW passing are discussed.

Atomic force microscopy has been used to investigate the topography of CdTe thin films grown by electrodeposition on monocrystalline substrates from aqueous solution of Cd and Te salts at elevated temperatures under overpressure. The surface morphology of the electrodeposited layers is found to be strongly effected by the temperature and the growth rates. Formation of flat terraced facets was observed for layers deposited at higher temperatures that allows to conclude the layer-by-layer growth mechanics. This gives an evidence to suggest that the epitaxial growth can be in principle realized on the base of the electrochemical deposition process.

On the example of the PbTe and Pb_0.77Sn₀₂₃Te on BaF₂ the possibility of using the weak magnetic field resistance technique for the evaluation of mismatch- thermally induced strains in semiconductors with multivalley band structure is discussed. Strain value and strain relaxation dynamics after many temperature cycles between room temperature and 77K have been investigated for n- and p- PbTe and PbSnTe epitaxial layers on BaF₂ substrates.

An action of powerful laser pulsed irradiation on photoelectric properties of epitaxial Cd_xHg_1-xTe films with a cellular structure is studied. An increase in the photosensitivity of the investigated samples is attributed to the gettering and redistribution of electrically active point defects into crystal. Using the calculations of the temperature of the samples, the depth of chock wave formation and the shock wave pressure, one is shown that the shock wave, induced by nanosecond purposes of laser radiation in phenomena taking place plays the greatest role. It is confirmed by data obtained from original experiments especially carried out.

Purposeful changes of the photoelectric properties of GaAs crystals by irradiation with nanosecond ruby laser pulses were studied in order to obtain structures with desired physical properties. It was established that irradiation of polished GaAs crystals with laser pulses of energy density above the melting threshold increased the photoconductivity signal and decreased the recombination rate of the nonequilibrium charge carriers because of epitaxial recrystallization of the damaged surface layer. The photoconductivity of the samples with anisotropically etched surface decreased after such laser irradiation. The resistivity of irradiated GaAs crystals decreased because of formation of shallow donor centers. The reasons for these laser-stimulated phenomena were determined and the mechanism of laser irradiation was discussed. The method to improve the photoelectric parameters of GaAs crystal by means of pulsed laser irradiation is offered.

Electrochemical process of the n-Si macroporous photonic structure formation has been investigated. The stationary distribution of the nonequilibrium hole concentration through the depth of n-Si plates after the intrinsic backside illumination was calculated. The light intensity and the electrical field regimes were determined for the macropore formation with the constant hole concentration on the tips. The stationary current regime is not equal to the electrochemical process stability. It was found that the stabilization of the hole concentration due to the light intensity change is more effective relatively the electrical field variation. The hole concentration stability and the cylindrical pore formation are possible for the high photosensitive samples only.

For the first time the effect of ionizing particles of different type and of condition of growth from gaseous phase upon exciton spectra of black zinc diphosphide has been studied. It was shown that the defects of phosphorus sublattice which are the principal centers of optical activity in the IR, are responsible for structural evolution of black zinc diphosphide crystals in the process of their growth and interaction with radiation of different types.

The given results of investigation are dealing with optical properties of zinctetratiogallate films, the influence of thermoprocessing and natural aging on them. It is demonstrated that transmission region of these films is 0.3- 25 mcm, the index of refraction increases to n equals 2.33 and band gap width is E_g equals 3.7 eV. In consequence of thermoprocessing at 473 K, the index of refraction increases to 2.40. The optimum technological conditions of films preparation by the method of pulse laser sputtering and quasiequilibrium evaporation are determined.

The InAs dissolution in HNO₃-HBr-H₂O and Br₂-HBr solutions is investigated. The surface of equal etching rates is constructed and the process limiting stages of dissolution depending on a size of a ratio in such solutions are determined. The kinetics of InAs dissolution in Br₂- HBr solutions is investigated. The solution region which can be used for chemicodynamic polishing of InAs is determined.

It is shown that as well as in the cases of II-YI and IY-YI group semiconductors the comparison of experimental results about phase relations of A¹₂B^YI semiconductor compounds with metals and given thermodynamic calculations testifies that the calculations of thermodynamic Gibbs potential changes in the systems A¹₂B^YI - Me alloy to determine the presence or absence of exchange interacting in each particular system with sufficient reliability. Such estimation become more reliable at the simultaneous examination of the phase diagrams of binary systems limiting each particular ternary system and taking into account the stability of all existing binary and ternary phases.

In this paper possibilities of the UV-spectroscopy method to investigate the kinetic of the gas phase formation in the system GaP-PCl₃-AsCl₃-H₂ are discussed. The model describing the mechanism of GaAs_x-P_1-x/GaAs layers epitaxial deposition is suggested at the isothermal CVD-method.

The structural characteristics of vacuum deposited PbTe films on Si substrate with buffer porous silicon layer were investigated. It was found, that films have orientation along the growth direction. Electron and optical microscopy data have shown the absence of flaws, pores, metal and chalcogen microinclusions. Mosaic structure with a grain size 20-60 micrometers was detected by selective chemical etching and acoustic microscopy methods. Single-crystal structure of grains was shown from the investigations of x-ray pole figures. It was found that thick amorphous layers on a porous silicon surface change the nature of PbTe films growth.

An experimental study of the dispersion of the refractive indices n in (As₂S₃)_x(AsI₃)_1-x glasses was performed. Experimental results were fitted by the Herzberger pentanomial which gave a possibility to calculate the dn/d(lambda) and d²n/d(lambda) ² values. In the short wave spectral domain the dispersion coefficient dn/d(lambda) of the glassy As₂S₃ appears to be the same as in KRS-5, and with increasing the iodine concentration in the glasses the value of dn/d(lambda) decreases. The zero-dispersion os the glasses under study is shifted towards the long waves as the iodine concentration increases.

A simple model for the chemical profile etching is considered. The process is shown to substantially depend on the gap between the sample and the tool. Some experimental results are given that support the theoretical predictions made. These results serve as a basis for an attempt to apply the model considered to more complicated cases.

Thin films of 1,000-nm thickness were deposited from Ge₃₃As₁₂Se₅₅ glass by flash evaporation onto n-Si substances coated with thermally evaporated antimony or bismuth layer of 10-nm thickness. Thermal annealing of the structure has been conducted at a temperature of 450 K during 90 minutes. The main parameters of the thermodiffusion processes have been determined by the capacitor-voltage characteristics. Energy bands discontinuity on the n-Si-X-Ge₃₃As₁₂Se₅₅ interface after thermodiffusion of antimony and bismuth atoms have been found to be for the conduction band 0.61 and 0.86 eV, and for the valence band 0.08 and 0.17 eV, respectively. The diffusion in Ge₃₃As₁₂Se₅₅ film for antimony atom differs from that for the bismuth ones. It has been found that the diffusion processes were more intensive for antimony atoms and both types of the impurity atom exhibited nonuniform profiles. The diffusion coefficients for antimony and bismuth atoms in the near- surface layer of Ge₃₃As₁₂Se₅₅ film have been found to be respectively, 2.1 X 10^-14 and 2.3 X 10^-15 cm²/s. Inside the film the coefficients are 3.0 X 10^-14 and 1.2 X 10^-13 cm²/s. The higher intensity of the diffusion for antimony atoms has been related to the lower values for their atomic radii.

The influence of thermal annealing on electrical properties of the p-n structures formed by ion beam milling (IBM) on usually vacancy doped Cd_xHg_1-xTe single crystals with p(77K) equals 5.8 X 10¹⁵ cm^-3 was investigated. After IBM of the initial samples the n-type layers were created with the thickness about 10 (mu) and electron concentration of the mane part of n-type layers 5 X 10¹⁴ cm^-3. P-n structures were annealed on air at 85, 120 and 160 degrees C during 1, 2 and 4 hours. Degradation of the p-n structure after every annealing step was estimated on changes of the Hall coefficient magnetic field dependence. It was revealed that degradation of the p- n structure took place due to progressive thickness decreasing of n-layer through Hg passing to intersites and vacancy creation. The critical temperature during technology steps is equal about 100 degrees C.

Physical-chemical processes of Cd_xHg_1-xTe graded structures (GSS) growing by evaporation condensation- diffusion method on CdTe substrates from HgTe source were analyzed. GSS were melted to the necessary depth and after crystallization were annealed in mercury vapor in order to obtain Cd_xHg_1-xTe structure-perfect epitaxial layers of given composition.

Bulk Hg_0.8Cd_0.2Te crystals still are widely used as a base material for manufacturing IR photoreceivers for the 8-14 micrometers wavelengths range. As these purposes need the material with high mobility of electrons and very low concentration of impurities, problems of purity of the components, used for preparation of it, acquire prime significance.

The effect of the 5 nm thick ZnTe intermediate layers obtained by solid crystallization at growth temperature on the optical properties of ZnTe epilayers grown by molecular beam epitaxy (MBE) on (100) GaAs substrates has been investigated by low temperature photoluminescence and reflectance spectroscopy. Reduction of nonradiative center concentration and improvement of ZnTe epilayer photoluminescence characteristics have been achieved using of solid phase crystallized intermediate layers. At the same time defect depth nonuniformity was found to occur in ZnTe epilayers with and without such intermediate layers. Use of such surfactant layer and optimized technology conditions on early stage of growth makes possible to obtain CdZnTe/ZnTe quantum wells and super lattices with high luminescence efficiency for further application.

The results of the investigations of the transport properties of n- and p-Cd_xHg_1-xTe semiconductor crystals behavior at intensive ultrasonic are presented. Acoustostimulated phenomenon of mobility increasing and change of concentration are observed in region of impurity conductivity. The possible mechanisms of the acoustodynamic processes are analyzed. At first the phenomenon of the acoustostimulated p yields n conversion had been detected in p-Cd_xHg_1-xTe at T < 120 K.

Studying of simple and complex defects in zinc diphosphide after ionizing irradiation has been carried out. ZnP₂ crystals of (alpha) - and (beta) -modification have been irradiated by (gamma) -rays of Co⁶⁰, electrons and reactor's neutrons. Electrical and optical characteristics of initial, irradiated at different temperatures and annealed samples have been measured. From the analysis of experimental and literary dates it is clear that phosphorous chains in zinc diphosphide possess low radiation resistance and main optically active centers are induced by fast particles to phosphorous quasi-molecules.

In the present work the results of the action of penetrating radiation on GaP structures has been studied.

The ultrasound influence on the defects of technological and radiation origin of GaP light diodes has been investigated. GaP light diodes were treated by ultrasound wave in different operating modes. Electroluminescence spectra were measured at room and low temperatures, integrated luminosity of devices was checked by solar cell. In order to find out the radiation field influence on non-equilibrium defects of acoustic origin samples were irradiated at room temperature by gamma rays of Co⁶⁰. It has been discovered that in GaP light diodes treated by ultrasound unstable at room temperature dislocation networks occur at the volume of crystal. Ultrasound dose increase causes the creation of complex defects with high relaxation time and appearing of a part of more mobile defect,s which relax quicker. The nature of effects discovered has been discussed. The method of the emissive capacity restoring of samples degraded after irradiation have been proposed.