Exciton localization dynamics in AlxGa1-xN alloys

Hyeon Soo Kim; Robin A. Mair; Jing Li; Jing Yu Lin; Hongxing Jiang

doi:10.1117/12.381453

28 March 2000 Exciton localization dynamics in AlxGa1-xN alloys

Hyeon Soo Kim, Robin A. Mair, Jing Li, Jing Yu Lin, Hongxing Jiang

Proceedings Volume 3940, Ultrafast Phenomena in Semiconductors IV; (2000) https://doi.org/10.1117/12.381453
Event: Symposium on Integrated Optoelectronics, 2000, San Jose, CA, United States

Abstract

The optical properties of Al_xGa_1-xN alloys with x varied from 0 to 0.35 have been investigated by picosecond time-resolved photoluminescence (PL) spectroscopy. Our results revealed that while the PL intensity decreases with an increase of Al-content, the low temperature PL decay lifetime increases with Al-content. These results can be understood in terms of the effects of tail states in the density of states due to alloy fluctuation in the Al_xGa_1-xN alloys. The Al content dependence of the energy tail state distribution parameter, E₀, which is an important parameter for determining optical and electrical properties of the AlGaN alloys, has been obtained experimentally. The PL decay lifetime increases with the localization energy and consequently increases with Al content. The implications of our findings to III-nitride optoelectronic device applications are also discussed.

Citation Download Citation

Hyeon Soo Kim, Robin A. Mair, Jing Li, Jing Yu Lin, and Hongxing Jiang "Exciton localization dynamics in AlxGa1-xN alloys", Proc. SPIE 3940, Ultrafast Phenomena in Semiconductors IV, (28 March 2000); https://doi.org/10.1117/12.381453

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