Effects of illumination on the electrical properties of oxygen-deficient cuprates and manganites

Alain Gilabert; R. Cauro; Jean-Pierre Contour; M. G. Medici; J. C. Grenet; R. Papiernik; Ivan K. Schuller

doi:10.1117/12.397850

6 September 2000 Effects of illumination on the electrical properties of oxygen-deficient cuprates and manganites

Alain Gilabert, R. Cauro, Jean-Pierre Contour, M. G. Medici, J. C. Grenet, R. Papiernik, Ivan K. Schuller

Proceedings Volume 4058, Superconducting and Related Oxides: Physics and Nanoengineering IV; (2000) https://doi.org/10.1117/12.397850
Event: AeroSense 2000, 2000, Orlando, FL, United States

Abstract

We report the analogies between the electrical properties at low temperatures of oxygen deficient cuprates and manganites thin films under illumination by UV or visible light. For the cuprates, a decrease of the oxygen content decreases the critical temperature of the transition from the normal to the superconducting state while for the manganites it decreases the transition temperature at which the insulator-metal transition occurs. For full oxygenated cuprates and manganites thin films there is no effect of the illumination on the electrical properties of the films. For small oxygen deficient cuprates (in the normal state) and manganites thin films, light increases substantially the conductivity leading to a persistent photoinduced conductivity (PPC) and the effect of persistent photoconductivity increases with oxygen deficiency. For high oxygen deficiency, the cuprates and the manganites are insulating. In that case, a transient photoconductivity is observed in the cuprates and manganites. Moreover, a photoinduced insulator- metal (I-M) transition appears in these insulating thin films.

Citation Download Citation

Alain Gilabert, R. Cauro, Jean-Pierre Contour, M. G. Medici, J. C. Grenet, R. Papiernik, and Ivan K. Schuller "Effects of illumination on the electrical properties of oxygen-deficient cuprates and manganites", Proc. SPIE 4058, Superconducting and Related Oxides: Physics and Nanoengineering IV, (6 September 2000); https://doi.org/10.1117/12.397850

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