Paper
20 October 2000 Investigation of process latitude in e-beam lithography for positive CAR UVIII using novel volumetric linewidth measurement
Vladimir A. Kudryashov, Philip D. Prewett, Alan G. Michette
Author Affiliations +
Proceedings Volume 4226, Microlithographic Techniques in Integrated Circuit Fabrication II; (2000) https://doi.org/10.1117/12.404847
Event: International Symposium on Microelectronics and Assembly, 2000, Singapore, Singapore
Abstract
An application of a simple and low-cost novel volumetric linewidth measurement technique to e-beam lithography process optimization for the positive CAR UVIII demonstrates clearly its efficiency and accuracy. It helps to optimize exposure, PEB and development procedure to get the highest possible process latitude. For this optimized procedure structure linewidth does not exceed 10% for a 20% exposure variation. PEB temperature and time deviation for 1 degree(s)C and 1 second lead to a 0.5 nm and a 2.5 nm linewidth run-out correspondingly.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Vladimir A. Kudryashov, Philip D. Prewett, and Alan G. Michette "Investigation of process latitude in e-beam lithography for positive CAR UVIII using novel volumetric linewidth measurement", Proc. SPIE 4226, Microlithographic Techniques in Integrated Circuit Fabrication II, (20 October 2000); https://doi.org/10.1117/12.404847
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CITATIONS
Cited by 2 scholarly publications.
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KEYWORDS
Electron beam lithography

Scanning electron microscopy

Lithography

Chemical analysis

Chemically amplified resists

Information technology

Microscopes

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