Extremely broadband superluminescent diodes/semiconductor laser amplifiers using nonidentical InGaAsP quantum wells

Bing-Ruey Wu; Ching-Fuh Lin; Lih-Wen Laih; Tien-Tsorng Shih

doi:10.1117/12.428027

30 May 2001 Extremely broadband superluminescent diodes/semiconductor laser amplifiers using nonidentical InGaAsP quantum wells

Bing-Ruey Wu, Ching-Fuh Lin, Lih-Wen Laih, Tien-Tsorng Shih

Author Affiliations +

Proceedings Volume 4292, Optoelectronic Interconnects VIII; (2001) https://doi.org/10.1117/12.428027
Event: Symposium on Integrated Optics, 2001, San Jose, CA, United States

Abstract

Extremely broadband emission is obtained from superluminescent diodes/semiconductor laser amplifiers with nonidentical quantum wells made of InGaAsP/InP materials. Two opposite sequences of nonidentical multiple quantum wells (MQWs), consisting of three In_0.67Ga_0.33As_0.72P_0.28 quantum wells and two In_0.53Ga_0.47As QWs, are designed, fabricated, and measured. Nonuniform carrier distribution inside MQWs is further verified experimentally.

Citation Download Citation

Bing-Ruey Wu, Ching-Fuh Lin, Lih-Wen Laih, and Tien-Tsorng Shih "Extremely broadband superluminescent diodes/semiconductor laser amplifiers using nonidentical InGaAsP quantum wells", Proc. SPIE 4292, Optoelectronic Interconnects VIII, (30 May 2001); https://doi.org/10.1117/12.428027

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