Modeling and numerical simulation of the optical intensity distribution in double-heterostructure semiconductor lasers

Ladislav Kuna; Frantisek Uherek

doi:10.1117/12.417842

7 March 2001 Modeling and numerical simulation of the optical intensity distribution in double-heterostructure semiconductor lasers

Ladislav Kuna, Frantisek Uherek

Author Affiliations +

Proceedings Volume 4356, 12th Czech-Slovak-Polish Optical Conference on Wave and Quantum Aspects of Contemporary Optics; (2001) https://doi.org/10.1117/12.417842
Event: 12th Czech-Slovak-Polish Optical Conference on Wave and Quantum Aspects of Contemporary Optics, 2000, Velke Losiny, Czech Republic

Abstract

The optical intensity distribution is theoretically studied in a double-heterostructure (DH), Al_xGa_1-xAs- GaAs material system using PICS3D software simulation. The electrical and optical equations to describe the behavior of semiconductor lasers are reviewed. To investigate the optical and carrier confinement in basic DH, the index x of AlAs mole fraction is varied. From computational results and technological considerations, index x 0.35 is chosen for a dielectric slab waveguide. In order to accomplish optical and electrical confinement in the lateral direction, oxide- stripe and ridge waveguide geometry is treated. The light verus current characteristics, electron concentration profiles, optical intensity distribution, as well as current flow are evaluated. Finally, it follows from the computed characteristics that optical and carrier confinement in transverse and lateral directions is accomplished for ridge- waveguide geometry with a ridge height of 540 nm.

Citation Download Citation

Ladislav Kuna and Frantisek Uherek "Modeling and numerical simulation of the optical intensity distribution in double-heterostructure semiconductor lasers", Proc. SPIE 4356, 12th Czech-Slovak-Polish Optical Conference on Wave and Quantum Aspects of Contemporary Optics, (7 March 2001); https://doi.org/10.1117/12.417842

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