Impact of the LWIR photodiodes geometry on their basic parameters

Jakub Wenus; Jaroslaw Rutkowski; Krzysztof Adamiec; Leszek Kubiak; Pawel Madejczyk

doi:10.1117/12.425457

17 April 2001 Impact of the LWIR photodiodes geometry on their basic parameters

Jakub Wenus, Jaroslaw Rutkowski, Krzysztof Adamiec, Leszek Kubiak, Pawel Madejczyk

Proceedings Volume 4413, International Conference on Solid State Crystals 2000: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology; (2001) https://doi.org/10.1117/12.425457
Event: International Conference on Solid State Crystals 2000, 2000, Zakopane, Poland

Abstract

This paper concerns HgCdTe heterostructure photodiodes for detection of infrared radiation from 8-12micrometers spectral range. Heterostructures were made by liquid phase epitaxy on the CdZnTe substrates. The cap layer of wider energy gap was used to suppress the generation-recombination current from the top contact. P-on-n junctions were placed in the narrow band-gap area close to the graded region. It was accomplished by appropriate selection of the cap layer thickness and adequate choice of parameters of the As diffusion process. Photodiodes were mesa delineated and illuminated through the substrate. Analysis of the impact of p-n junction location within a heterostructure, contact locations and mesa depth on photo diode parameters, was carried out. The experimental results were compared with two-dimensional numerical calculations performed in APSYS.

Citation Download Citation

Jakub Wenus, Jaroslaw Rutkowski, Krzysztof Adamiec, Leszek Kubiak, and Pawel Madejczyk "Impact of the LWIR photodiodes geometry on their basic parameters", Proc. SPIE 4413, International Conference on Solid State Crystals 2000: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology, (17 April 2001); https://doi.org/10.1117/12.425457

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KEYWORDS

Photodiodes

Diffusion

Heterojunctions

Mercury cadmium telluride

Liquid phase epitaxy

Resistance

Etching

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