Film growth on single MgO and SiO2 covered Si substrate by pulsed laser deposition

Ying Su; Jing Zhao; Li Lu; Man On Lai; Wen Dong Song; Yongfeng Lu

doi:10.1117/12.456874

25 February 2002 Film growth on single MgO and SiO₂ covered Si substrate by pulsed laser deposition

Ying Su, Jing Zhao, Li Lu, Man On Lai, Wen Dong Song, Yongfeng Lu

Proceedings Volume 4426, Second International Symposium on Laser Precision Microfabrication; (2002) https://doi.org/10.1117/12.456874
Event: Second International Symposium on Laser Precision Micromachining, 2001, Singapore, Singapore

Abstract

STO and subsequent YBCO thin films with different orientations have been grown on a single crystal MgO (100) substrate as well as a MgO on a 400nm amorphous SiO₂ covered Si (100) substrate using pulsed laser deposition (PLD) technique. Cross-sectional transmission electron microscopy (TEM) showed an epitaxial growth of highly c-axis oriented YBCO(001)/STO(100) on a single crystal MgO(100). TEM investigation on MgO/SiO₂ and MgO indicating interfacial reaction between SiO₂ and MgO. Chemical reaction may be possible at the interface when films are hold at high temperature based on the calculation of Gibbs free energy. Auger electron spectroscopy (AES) showed that an uphill diffusion of Ba from YBCO occurred during deposition and post thermal treatment processes.

Citation Download Citation

Ying Su, Jing Zhao, Li Lu, Man On Lai, Wen Dong Song, and Yongfeng Lu "Film growth on single MgO and SiO₂ covered Si substrate by pulsed laser deposition", Proc. SPIE 4426, Second International Symposium on Laser Precision Microfabrication, (25 February 2002); https://doi.org/10.1117/12.456874

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