Paper
21 December 2001 Proximity printing by wave-optically designed masks
Frank Wyrowski, Ernst-Bernhard Kley, Sven Buehling, Ton J.M. Nellissen, Lingli Wang, Maarten Dirkzwager
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Abstract
Photolithography based on proximity printing offers a high throughput and cost effective patterning technology for production of for instance large area liquid crystal displays. The resolution of this technique is limited due to wave-optical effects in the proximity gap between the binary amplitude mask and the substrate. We can improve the resolution drastically by replacing the conventional photomask with a mask causing both amplitude and phase modulation of the illumination wave. We describe a wave-optical design procedure of such masks. The feasibility of the method is demonstrated by results from computer simulations and practical experiments. We show that for a 50 micron gap a 3 micron line/space pattern is resolved clearly for visible light illumination, whereas under conventional conditions the image is completely degraded. The proximity mask used in our experiments was fabricated by e-beam lithography with four height levels and two amplitude transmission values.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Frank Wyrowski, Ernst-Bernhard Kley, Sven Buehling, Ton J.M. Nellissen, Lingli Wang, and Maarten Dirkzwager "Proximity printing by wave-optically designed masks", Proc. SPIE 4436, Wave-Optical Systems Engineering, (21 December 2001); https://doi.org/10.1117/12.451293
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CITATIONS
Cited by 7 scholarly publications.
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KEYWORDS
Photomasks

Photoresist materials

Printing

Chromium

Etching

Binary data

Electron beam lithography

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