Enhanced soft x-ray reflectivity of Cr/Sc multilayers by ion-assisted sputter deposition

Fredrik Eriksson; Goeran A. Johansson; Hans M. Hertz; Jens Birch

doi:10.1117/12.450948

20 December 2001 Enhanced soft x-ray reflectivity of Cr/Sc multilayers by ion-assisted sputter deposition

Fredrik Eriksson, Goeran A. Johansson, Hans M. Hertz, Jens Birch

Proceedings Volume 4506, Soft X-Ray and EUV Imaging Systems II; (2001) https://doi.org/10.1117/12.450948
Event: International Symposium on Optical Science and Technology, 2001, San Diego, CA, United States

Abstract

Cr/Sc multilayers have been grown on Si substrates using DC magnetron sputtering. The multilayers are intended as condenser mirrors in a soft x-ray microscope operating at the wavelength 3.374 nm. They were designed for normal reflection of the first and second order with multilayer periods of 1.692 nm and 3.381 nm, and layer thickness ratios of 0.471 and 0.237, respectively. At-wavelength soft x-ray reflectivity measurements were carried out using a reflectometer with a compact soft x-ray laser-plasma source. The multilayers were irradiated during growth with Ar ions, varying both in energy (9-113 eV) and flux, in order to stimulate the ad-atom mobility and improve the interface flatness. It was found that to obtain a maximum soft x-ray reflectivity with a low flux (Cr=0.76, Sc=2.5) of Ar ions a rather high energy of 53 eV was required. Such energy also caused intermixing of the layers. By the use of a solenoid surrounding the substrate, the arriving ion-to-metal flux ratio could be increased 10 times and the ion energy could be decreased. A high flux (Cr=7.1, Sc=23.1) of low energy (9 eV) Ar ions founded the most favorable growth condition in order to limit the intermixing with a subsistent surface flatness.

Citation Download Citation

Fredrik Eriksson, Goeran A. Johansson, Hans M. Hertz, and Jens Birch "Enhanced soft x-ray reflectivity of Cr/Sc multilayers by ion-assisted sputter deposition", Proc. SPIE 4506, Soft X-Ray and EUV Imaging Systems II, (20 December 2001); https://doi.org/10.1117/12.450948

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