Improved responsivity at the L-band wavelength of a strain-compensated InGaAs multiple quantum well photodiode

Toru Uchida; Atsushi Yazaki; Chikashi Anayama; Akira Furuya; Tatsunori Shirai; Masahiro Kobayashi

doi:10.1117/12.436008

30 July 2001 Improved responsivity at the L-band wavelength of a strain-compensated InGaAs multiple quantum well photodiode

Toru Uchida, Atsushi Yazaki, Chikashi Anayama, Akira Furuya, Tatsunori Shirai, Masahiro Kobayashi

Author Affiliations +

Proceedings Volume 4532, Active and Passive Optical Components for WDM Communication; (2001) https://doi.org/10.1117/12.436008
Event: ITCom 2001: International Symposium on the Convergence of IT and Communications, 2001, Denver, CO, United States

Abstract

The absorption layer of a strain-compensated InGaAs multiple quantum well (MQW) was shown to improve the responsivity at the L-band wavelength of a photodiode used in optical fiber communications. The MQW was examined to clarify the range of structural parameters, which are strain and thickness, with which a smooth surface morphology can be obtained. A photodiode with an absorption region of a strain-compensated MQW exhibiting a smooth surface morphology was fabricated, and it was proven to have a high crystalline quality with a low dark current. The MQW absorption region enabled the responsivity of the photodiode to exceed that of a lattice- matched InGaAs photodiode. Carrier transport vertical to the MQW layer was shown to be scarcely affected by the hole trapping caused by band discontinuity.

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Toru Uchida, Atsushi Yazaki, Chikashi Anayama, Akira Furuya, Tatsunori Shirai, and Masahiro Kobayashi "Improved responsivity at the L-band wavelength of a strain-compensated InGaAs multiple quantum well photodiode", Proc. SPIE 4532, Active and Passive Optical Components for WDM Communication, (30 July 2001); https://doi.org/10.1117/12.436008

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