Paper
24 July 2002 Fluoropolymer resists for 157-nm lithography
Minoru Toriumi, Naomi Shida, Hiroyuki Watanabe, Tamio Yamazaki, Seiichi Ishikawa, Toshiro Itani
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Abstract
Fluoropolymers are key materials for single-layer resists in 157-nm lithography. We investigated main-chain fluorinated polymers and found that the incorporation of fluorine atoms into polymer backbones such as that in tetrafluoroethylene and monocyclic monomers reduced their absorption coefficients to less than 1 micrometers -1 at 157 nm, while side-chain fluorinated polymers had absorption coefficients of 2 to 3 micrometers -1. The main-chain fluorinated polymers also showed good solubility in a standard alkaline developer and their dry-etching resistance was comparable to that of a ArF resist. Prototype positive-tone resists had good sensitivities of less than 10 mJ/cm2, and they exhibited fine imaging resolution with 80-nm dense patterns. The resists can be used to obtain 300-nm-thick films.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Minoru Toriumi, Naomi Shida, Hiroyuki Watanabe, Tamio Yamazaki, Seiichi Ishikawa, and Toshiro Itani "Fluoropolymer resists for 157-nm lithography", Proc. SPIE 4690, Advances in Resist Technology and Processing XIX, (24 July 2002); https://doi.org/10.1117/12.474218
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Cited by 28 scholarly publications and 1 patent.
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KEYWORDS
Polymers

Absorption

Lithography

Fluorine

Etching

Resistance

Transparency

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