Self-channelling of light beams in semiconductor compounds

Uladzimir V. Zubrytski

doi:10.1117/12.475908

24 July 2002 Self-channelling of light beams in semiconductor compounds

Uladzimir V. Zubrytski

Proceedings Volume 4751, ICONO 2001: Nonlinear Optical Phenomena and Nonlinear Dynamics of Optical Systems; (2002) https://doi.org/10.1117/12.475908
Event: XVII International Conference on Coherent and Nonlinear Optics (ICONO 2001), 2001, Minsk, Belarus

Abstract

The self-channeling of cylindrical light beams versus the excitation density, light frequency, and crystallographic orientation is numerically analyzed in GaAs, ZnSe, CdS semiconductors. A comparison of the data obtained and reported for diode and streamer semiconductor lasers is made. Made out of reversing of the angular anisotropy of the real third order nonlinear optical susceptibility is worthy to be studied for a practical implementation.

Citation Download Citation

Uladzimir V. Zubrytski "Self-channelling of light beams in semiconductor compounds", Proc. SPIE 4751, ICONO 2001: Nonlinear Optical Phenomena and Nonlinear Dynamics of Optical Systems, (24 July 2002); https://doi.org/10.1117/12.475908

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