Design and mixed modeling of PhCCD with vertical antiblooming structure

Evgeni V. Kostyukov; Andre A. Pugachev; Alexander S. Skrylev; Pavel A. Skrylev

doi:10.1117/12.463470

30 April 2002 Design and mixed modeling of PhCCD with vertical antiblooming structure

Evgeni V. Kostyukov, Andre A. Pugachev, Alexander S. Skrylev, Pavel A. Skrylev

Proceedings Volume 4761, Second Conference on Photonics for Transportation; (2002) https://doi.org/10.1117/12.463470
Event: Second Conference on Photonics for Transportation, 2001, Sochy, Russian Federation

Abstract

Mixed modeling of photosensitive CCD-features is given. The modeling includes simulation of the following design stages: 2D-fabrication process, 2D-potential and electric field distributions and wells providing desired characteristics of the CCD pixel, charge capacity, photosensitivity, noises, modulation transfer function, and output signal using specialized CAD. A new four-phase PhCCD-chip with size of photosensitive area equal to 582(H) X 500 (V) pixels, pixel size 17 (V) X 11 (H) micrometers , photodiode accumulator, and vertical antiblooming structure has been simulated and designed.

Citation Download Citation

Evgeni V. Kostyukov, Andre A. Pugachev, Alexander S. Skrylev, and Pavel A. Skrylev "Design and mixed modeling of PhCCD with vertical antiblooming structure", Proc. SPIE 4761, Second Conference on Photonics for Transportation, (30 April 2002); https://doi.org/10.1117/12.463470

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